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p-typeChemical compound
A compact model of the low-field effective carrier mobility is developed for n- and p-type MOSFETs with either polySi or TiN gate, ultrathin SiO2/HfO2 gate stacks, and silicon under biaxial or uniaxial stress conditions. Physical insights, theoretical analyses and experimental investigations are used to develop and accurately calibrate the model
[[abstract]]A new mobility model, together with its extraction method for manufacturing strained-Si ...
An explicit carrier-based compact model for the nanowire surrounding-gate (SRG) Metal-oxide-Semicond...
This paper presents a novel unified model of the low-field electron mobility for bulk and silicon-on...
A number of experiments have recently appeared in the literature that extensively investigate the si...
An easy-to-implement hole mobility model, which accurately predicts low-field mobility in bulk MOSFE...
none6In this work we propose a unified model for the low-field effective electron mobility in SOI an...
Abstract. A semi analytical model describing the bulk mobility for holes in strained-p-Si layers as ...
In this paper, a critical review of various models for the effective mobility of charge carriers in ...
In this paper, together with the accompanying Part I, an easy-to-implement electron mobility model w...
An easy-to-implement electron mobility model, which accurately predicts low-field mobility in the ch...
none3noneALESSANDRINI M.; ESSENI D.; FIEGNA C.ALESSANDRINI M.; ESSENI D.; FIEGNA C
Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at diff...
As traditional CMOS is gradually approaching the limit of the bulk technology scaling, non-classical...
none4In this work we investigate the performance of fully-depleted silicon-on-insulator (SOI) and do...
Abstract: Although cryptography constitutes a considerable part of the overall security architecture...
[[abstract]]A new mobility model, together with its extraction method for manufacturing strained-Si ...
An explicit carrier-based compact model for the nanowire surrounding-gate (SRG) Metal-oxide-Semicond...
This paper presents a novel unified model of the low-field electron mobility for bulk and silicon-on...
A number of experiments have recently appeared in the literature that extensively investigate the si...
An easy-to-implement hole mobility model, which accurately predicts low-field mobility in bulk MOSFE...
none6In this work we propose a unified model for the low-field effective electron mobility in SOI an...
Abstract. A semi analytical model describing the bulk mobility for holes in strained-p-Si layers as ...
In this paper, a critical review of various models for the effective mobility of charge carriers in ...
In this paper, together with the accompanying Part I, an easy-to-implement electron mobility model w...
An easy-to-implement electron mobility model, which accurately predicts low-field mobility in the ch...
none3noneALESSANDRINI M.; ESSENI D.; FIEGNA C.ALESSANDRINI M.; ESSENI D.; FIEGNA C
Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at diff...
As traditional CMOS is gradually approaching the limit of the bulk technology scaling, non-classical...
none4In this work we investigate the performance of fully-depleted silicon-on-insulator (SOI) and do...
Abstract: Although cryptography constitutes a considerable part of the overall security architecture...
[[abstract]]A new mobility model, together with its extraction method for manufacturing strained-Si ...
An explicit carrier-based compact model for the nanowire surrounding-gate (SRG) Metal-oxide-Semicond...
This paper presents a novel unified model of the low-field electron mobility for bulk and silicon-on...
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