Add to ORKGClustered sleep transistor insertion is an effective leakage power reduction technique that is well-suited for integration in an automated design flow and offers a flexible tradeoff between area, delay overhead and turn-on transition time. In this work, we focus on the design of a family of sleep transistor cells, fully compatible with the physical design rules of a commercial 65nm CMOS library. We describe circuit-level and layout optimizations, as well as the cell characterization procedure required to support automated sleep transistor cell selection and instantiation in a clustered power-gating insertion flow
Sleep transistor insertion is a key step in low power design methodologies for nanometer CMOS. In th...
Sleep transistor insertion is a key step in low power design methodologies for nanometer CMOS. In th...
[[abstract]]©2007 ACM-Multithreshold CMOS (MTCMOS) is a circuit style that can effectively reduce le...
Clustered sleep transistor insertion is an effective leakage power reduction technique that is well-...
A very popular approach for leakage power reduction is today represented by the adoption of emerging...
Leakage power reduction in nano-CMOS designs has gained tremendous interest both in academia and ind...
Leakage power has become a serious concern in nanometer CMOS technologies, and power-gating has show...
The use of sleep transistors as power-gating elements to cut-off sub-threshold leakage stand-by curr...
This paper introduces a new approach to sub-threshold leakage power reduction in CMOS circuits. Our ...
This paper concentrates on the various power reduction techniques for clustered sleep transistors an...
Leakage power has grown significantly and is a major challenge in SoC design. Among SoC's compo...
Optimum power gating sleep transistor design and implementation are critical to a successful low-pow...
Concurrent clock gating (CG) and power gating (PG) can help to tackle both static and dynamic power ...
[[abstract]]Multithreshold CMOS (MTCMOS) is a circuit style that can effectively reduce leakage powe...
[[abstract]]One of the effective techniques to reduce leakage power is power gating. Previously, a D...
Sleep transistor insertion is a key step in low power design methodologies for nanometer CMOS. In th...
Sleep transistor insertion is a key step in low power design methodologies for nanometer CMOS. In th...
[[abstract]]©2007 ACM-Multithreshold CMOS (MTCMOS) is a circuit style that can effectively reduce le...
Clustered sleep transistor insertion is an effective leakage power reduction technique that is well-...
A very popular approach for leakage power reduction is today represented by the adoption of emerging...
Leakage power reduction in nano-CMOS designs has gained tremendous interest both in academia and ind...
Leakage power has become a serious concern in nanometer CMOS technologies, and power-gating has show...
The use of sleep transistors as power-gating elements to cut-off sub-threshold leakage stand-by curr...
This paper introduces a new approach to sub-threshold leakage power reduction in CMOS circuits. Our ...
This paper concentrates on the various power reduction techniques for clustered sleep transistors an...
Leakage power has grown significantly and is a major challenge in SoC design. Among SoC's compo...
Optimum power gating sleep transistor design and implementation are critical to a successful low-pow...
Concurrent clock gating (CG) and power gating (PG) can help to tackle both static and dynamic power ...
[[abstract]]Multithreshold CMOS (MTCMOS) is a circuit style that can effectively reduce leakage powe...
[[abstract]]One of the effective techniques to reduce leakage power is power gating. Previously, a D...
Sleep transistor insertion is a key step in low power design methodologies for nanometer CMOS. In th...
Sleep transistor insertion is a key step in low power design methodologies for nanometer CMOS. In th...
[[abstract]]©2007 ACM-Multithreshold CMOS (MTCMOS) is a circuit style that can effectively reduce le...