Add to ORKGFinFETs may start to replace planar MOSFETs for specific applications at the 32nm node and beyond due to their intrinsically better scalability. Mainstream applications of such a technology require a reliable and reproducible process. However, stochastic process fluctuations represent a major concern for matching performance of nanoscale devices. In particular, Line-Edge Roughness (LER) in printed device features and Random Dopant fluctuations (RD) are reported as becoming a serious concern. In this work, impact of both LER and RD on matching performance of FinFET structures conforming to LSTP-32nm specifications is investigated through statistically performed 2D and 3D device simulations. Contributions to LER from the fin, top- and sidewal...
In this work, three dimensional technology computer-aided design (TCAD) simulations are performed to...
FinFET is a promising architecture for low voltage/low-power applications at and beyond the 32nm tec...
ABSTRACT Device level variability in silicon double gate lateral Tunnel Field Effect Transistors (TF...
FinFETs may start to replace planar MOSFETs for specific applications at the 32nm node and beyond du...
none5Parameter variations pose an increasingly challenging threat to the CMOS technology scaling. Am...
As a result of CMOS scaling, the critical dimension (CD) of integrated circuits has been shrinking. ...
none4Short-range process variations such as line-edge roughness (LER) and random dopant fluctuations...
Threshold voltage ðVT Þ and drive current ðIONÞ variability of low stand-by power (LSTP)-32 nm FinFE...
Intra-die fluctuations in the nanoscale CMOS technology emerge inherently to geometrical variations ...
none3noWhile traditional scaling used to be accompanied by an improvement in device performance, thi...
Replacing the conventional MOSFET architecture with multiple gate structures like the FinFET can imp...
The impact of fin line-edge roughness on threshold voltage and drive current of LSTP-32nm Fin-FETs i...
3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs ...
This paper developed a full three-dimensional (3-D) statistical simulation approach to investigate F...
We report the numerical simulation study on the characteristic variability of 10-nm SOI Multi Fin n-...
In this work, three dimensional technology computer-aided design (TCAD) simulations are performed to...
FinFET is a promising architecture for low voltage/low-power applications at and beyond the 32nm tec...
ABSTRACT Device level variability in silicon double gate lateral Tunnel Field Effect Transistors (TF...
FinFETs may start to replace planar MOSFETs for specific applications at the 32nm node and beyond du...
none5Parameter variations pose an increasingly challenging threat to the CMOS technology scaling. Am...
As a result of CMOS scaling, the critical dimension (CD) of integrated circuits has been shrinking. ...
none4Short-range process variations such as line-edge roughness (LER) and random dopant fluctuations...
Threshold voltage ðVT Þ and drive current ðIONÞ variability of low stand-by power (LSTP)-32 nm FinFE...
Intra-die fluctuations in the nanoscale CMOS technology emerge inherently to geometrical variations ...
none3noWhile traditional scaling used to be accompanied by an improvement in device performance, thi...
Replacing the conventional MOSFET architecture with multiple gate structures like the FinFET can imp...
The impact of fin line-edge roughness on threshold voltage and drive current of LSTP-32nm Fin-FETs i...
3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs ...
This paper developed a full three-dimensional (3-D) statistical simulation approach to investigate F...
We report the numerical simulation study on the characteristic variability of 10-nm SOI Multi Fin n-...
In this work, three dimensional technology computer-aided design (TCAD) simulations are performed to...
FinFET is a promising architecture for low voltage/low-power applications at and beyond the 32nm tec...
ABSTRACT Device level variability in silicon double gate lateral Tunnel Field Effect Transistors (TF...