The project concerns the study carried out in GaN nanocolumns by means of different characterization techniques. The growth has been carried out at the Forschungszentrum J\ufclich \u2013 ISG1 by PAMBE (Plasma Assisted Molecular Beam Epitaxy). Structural and electrical characterization of the nanowhiskers have been performed by PL (photoluminescence), CL (cathodoluminescence), Raman Spectroscopy, dark and UV conductivity and Spectral Photoconductivity. The inhomogenous distribution of specific defects was found along the nanocolums and the effect of size in electrical and optical behaviour is deeply investigated
International audienceAbstract We analyse the electrical and optical properties of single GaN nanowi...
This paper presents an investigation of photoelectric properties of the CVD-grown multi-prong GaN na...
Gallium nitride (GaN) nanowires have potential as nanoscale optoelectronic building blocks that can ...
The project concerns the study carried out in GaN nanocolumns by means of different characterization...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
peer reviewedMorphology and optical properties of GaN nanowhiskers grown by molecular beam epitaxy(M...
In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grow...
The optical properties of GaN nanocolumn structures containing InGaN quantum disks are investigated ...
We use LPCVD and silicon wafer to synthesis straight GaN nanowires.The parameters of the growth cond...
none2nohttp://www.elsevier.com/wps/find/bookdescription.cws_home/714787/descriptionIn this chapter w...
AbstractElectrochemical deposition method is used to prepare GaN nanostructure. The morphological st...
This dataset contains the results of scanning electron microscopy (SEM), micro-photoluminescence (PL...
In recent years, gallium nitride-based LEDs have been continuously developed and employed in not onl...
Contains fulltext : 19110_optichofg.pdf (publisher's version ) (Open Access)Group ...
A comprehensive study has been conducted in order to develop, understand and define the epitaxial gr...
International audienceAbstract We analyse the electrical and optical properties of single GaN nanowi...
This paper presents an investigation of photoelectric properties of the CVD-grown multi-prong GaN na...
Gallium nitride (GaN) nanowires have potential as nanoscale optoelectronic building blocks that can ...
The project concerns the study carried out in GaN nanocolumns by means of different characterization...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
peer reviewedMorphology and optical properties of GaN nanowhiskers grown by molecular beam epitaxy(M...
In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grow...
The optical properties of GaN nanocolumn structures containing InGaN quantum disks are investigated ...
We use LPCVD and silicon wafer to synthesis straight GaN nanowires.The parameters of the growth cond...
none2nohttp://www.elsevier.com/wps/find/bookdescription.cws_home/714787/descriptionIn this chapter w...
AbstractElectrochemical deposition method is used to prepare GaN nanostructure. The morphological st...
This dataset contains the results of scanning electron microscopy (SEM), micro-photoluminescence (PL...
In recent years, gallium nitride-based LEDs have been continuously developed and employed in not onl...
Contains fulltext : 19110_optichofg.pdf (publisher's version ) (Open Access)Group ...
A comprehensive study has been conducted in order to develop, understand and define the epitaxial gr...
International audienceAbstract We analyse the electrical and optical properties of single GaN nanowi...
This paper presents an investigation of photoelectric properties of the CVD-grown multi-prong GaN na...
Gallium nitride (GaN) nanowires have potential as nanoscale optoelectronic building blocks that can ...