Ion beam analysis of high pressure deposition of epitaxial PZT thin films
- Andrade, E.
- Blanco, O.
- de Lucio, O.G.
- Solis, C.
- Rocha, M.F.
- Zavala, E.P.
DOIAbstract
Epitaxial thin films of Pb(Zr0.53Ti0.47) (PZT) ferroelectric ceramic were successfully grown on Sr(Nb)TiO3 (SNTO) single crystal substrates by an high-pressure RF sputtering technique. Pure O2 was used as working gas at a pressure above 1 Torr. The crystalline films properties were evaluated by θ-2θ DRX scans. From these measurements we concluded that the PZT layers were single crystalline and c-axis oriented with a (001)PZ
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