Add to ORKGWe investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GaInP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers
We have performed a structural investigation of the atomic environment of Fe impurities introduced b...
We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that p...
170-174Single crystal GaAs substrates implanted with 70 MeV 120Sn have been investigated by X-ray di...
We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GaIn...
The structural and electrical characteristic properties of high temperature Fe implantation in InP, ...
Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 degre...
We have investigated the structural and electrical properties of GaInP/GaAs epilayers implanted with...
The authors investigated the electrical compensation induced by deep levels introduced in metal orga...
We have investigated the structural and electrical properties of GaInP/GaAs epilayers that we have i...
The authors investigated the electrical compensation induced by deep levels introduced in metal org...
Single crystal n-GaAs substrates have been implanted at room temperature with 70 MeV 56Fe and 120Sn ...
none5noneB.Fraboni; T.Cesca; A.Gasparotto; M.Longo; L.TarriconeB.Fraboni; T.Cesca; A.Gasparotto; M.L...
We performed structural and electrical investigations on high temperature Fe implanted InP in order ...
We performed structural and electrical investigations on high temperature Fe implanted InP in order ...
We have performed a structural investigation of the atomic environment of Fe impurities introduced b...
We have performed a structural investigation of the atomic environment of Fe impurities introduced b...
We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that p...
170-174Single crystal GaAs substrates implanted with 70 MeV 120Sn have been investigated by X-ray di...
We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GaIn...
The structural and electrical characteristic properties of high temperature Fe implantation in InP, ...
Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 degre...
We have investigated the structural and electrical properties of GaInP/GaAs epilayers implanted with...
The authors investigated the electrical compensation induced by deep levels introduced in metal orga...
We have investigated the structural and electrical properties of GaInP/GaAs epilayers that we have i...
The authors investigated the electrical compensation induced by deep levels introduced in metal org...
Single crystal n-GaAs substrates have been implanted at room temperature with 70 MeV 56Fe and 120Sn ...
none5noneB.Fraboni; T.Cesca; A.Gasparotto; M.Longo; L.TarriconeB.Fraboni; T.Cesca; A.Gasparotto; M.L...
We performed structural and electrical investigations on high temperature Fe implanted InP in order ...
We performed structural and electrical investigations on high temperature Fe implanted InP in order ...
We have performed a structural investigation of the atomic environment of Fe impurities introduced b...
We have performed a structural investigation of the atomic environment of Fe impurities introduced b...
We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that p...
170-174Single crystal GaAs substrates implanted with 70 MeV 120Sn have been investigated by X-ray di...