Add to ORKGThis paper presents a new and simple method for characterizing the thermal behavior of Heterojunction Bipolar Transistors, based on DC, AC and low frequency small signal measures of H (hybrid) parameters. Static characterization of the thermal behavior is achieved through the calculation of a thermal resistance, while a thermal impedance is used to describe thermal dynamic behavior. Validation results for the method obtained from both simulations and experimental data are included in the paper for a 10x2x40 \ub5m InGaP/GaAs power HBT
International audienceThis paper presents a dual approach for a coherent determination and validatio...
semiconductor device measurement; bipolar transistors; heterojunction bipolar transistors; analogue ...
AlGaAs/GaAs heterojunction bipolar transistor (HBT) has the advantages of superior switching speed, ...
This paper presents a new and simple method for characterizing the thermal behavior of Heterojunctio...
This paper presents a new and simple method for characterizing the thermal behavior ofHeterojunction...
Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transist...
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar tra...
International audienceIn this paper, a simple and accurate characterization method of the thermal im...
none3A simple method is proposed to derive the junction temperature and the bias- and temperature-d...
This paper introduces a new technique for the measurement of the thermal resistance of HBTs. The me...
International audienceIn this letter, we present a characterization method for the determination of ...
extraction procedure for thermal parameters of high power heterojunction bipolar transistors (HBT) w...
A simple method is proposed to derive the junction temperature and the bias- and temperature-depende...
International audienceThis paper has two main axis: firstly, we address the experimental characteriz...
Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and n...
International audienceThis paper presents a dual approach for a coherent determination and validatio...
semiconductor device measurement; bipolar transistors; heterojunction bipolar transistors; analogue ...
AlGaAs/GaAs heterojunction bipolar transistor (HBT) has the advantages of superior switching speed, ...
This paper presents a new and simple method for characterizing the thermal behavior of Heterojunctio...
This paper presents a new and simple method for characterizing the thermal behavior ofHeterojunction...
Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transist...
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar tra...
International audienceIn this paper, a simple and accurate characterization method of the thermal im...
none3A simple method is proposed to derive the junction temperature and the bias- and temperature-d...
This paper introduces a new technique for the measurement of the thermal resistance of HBTs. The me...
International audienceIn this letter, we present a characterization method for the determination of ...
extraction procedure for thermal parameters of high power heterojunction bipolar transistors (HBT) w...
A simple method is proposed to derive the junction temperature and the bias- and temperature-depende...
International audienceThis paper has two main axis: firstly, we address the experimental characteriz...
Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and n...
International audienceThis paper presents a dual approach for a coherent determination and validatio...
semiconductor device measurement; bipolar transistors; heterojunction bipolar transistors; analogue ...
AlGaAs/GaAs heterojunction bipolar transistor (HBT) has the advantages of superior switching speed, ...
