Annealing behaviour of high temperature implanted Fe impurities in n- InP

The lattice location of high temperature implanted Fe impurities in InP and the effect of post-implantation thermal treatments were studied by PIXE-RBS-channeling measurements. The results show that a high fraction (about 85%) of the Fe atoms is incorporated in high-symmetry sites after the high temperature implantation and most of them (more than 60%) occupy substitutional positions. Post-implantation annealing treatments induce the escape of the Fe atoms from their sites and the substitutional fraction decreases by increasing the annealing temperature. Assuming an Arrhenius behavior for this process, the activation energy for the displacement of the Fe atoms from substitutional sites is estimated to be 0.76 eV