Add to ORKGThe carrier lifetime in SiGe planar waveguides with Si cladding was measured with a pump-and-probe technique, using an ultrashort 810 nm laser pulse and a CW 1.55 mu m probe, as a function of layer thickness d and Ge concentration x. The measured lifetimes are in the range of 20-90 ns. The obtained interface recombination velocity S is a growing function of both d and x, taking values in the range from 300 to 4000 cm/s
We investigate the effects of implanting silicon directly into a silicon waveguide to modify carrier...
Measurements of effective lifetimes on epitaxial silicon thin-film material have been carried out. T...
An important factor influencing the generation and recombination in a semiconductor device is the fa...
The carrier lifetime in SiGe planar waveguides with Si cladding was measured with a pump-and-probe t...
The carrier lifetime in Si1-xGex planar waveguides with Si cladding was measured as a function of la...
Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission pump-...
Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For...
Today\u27s problems in silicon photonics will likely require an integration of CMOS compatible, high...
An investigation of minority carrier lifetimes in germanium and silicon semiconducting material has ...
Photodiodes sensitive in the NIR and integratable with Si have been pursued for many applications i...
High-quality Ge-on-Si (GoS) heterostructures are pursued for many applications, including near infra...
We describe a method to determine the carrier recombination lifetime and surface recombination veloc...
The minority carrier lifetime is measured in the silicon epitaxial layer. The lifetime is 8.0 ms in ...
A comparison of two methods for measurement of the free carrier recombination lifetime in the unpass...
The existing method for contactless measurement of the photoconductivity decay time is limited in te...
We investigate the effects of implanting silicon directly into a silicon waveguide to modify carrier...
Measurements of effective lifetimes on epitaxial silicon thin-film material have been carried out. T...
An important factor influencing the generation and recombination in a semiconductor device is the fa...
The carrier lifetime in SiGe planar waveguides with Si cladding was measured with a pump-and-probe t...
The carrier lifetime in Si1-xGex planar waveguides with Si cladding was measured as a function of la...
Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission pump-...
Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For...
Today\u27s problems in silicon photonics will likely require an integration of CMOS compatible, high...
An investigation of minority carrier lifetimes in germanium and silicon semiconducting material has ...
Photodiodes sensitive in the NIR and integratable with Si have been pursued for many applications i...
High-quality Ge-on-Si (GoS) heterostructures are pursued for many applications, including near infra...
We describe a method to determine the carrier recombination lifetime and surface recombination veloc...
The minority carrier lifetime is measured in the silicon epitaxial layer. The lifetime is 8.0 ms in ...
A comparison of two methods for measurement of the free carrier recombination lifetime in the unpass...
The existing method for contactless measurement of the photoconductivity decay time is limited in te...
We investigate the effects of implanting silicon directly into a silicon waveguide to modify carrier...
Measurements of effective lifetimes on epitaxial silicon thin-film material have been carried out. T...
An important factor influencing the generation and recombination in a semiconductor device is the fa...