An attempt to prepare a metalorganic precursor of gallium with reactivity at low temperature in chemical vapor deposition (CVD) systems was done by reacting N-methylpyrrolidine with metal gallium or gallium nitrate under mild conditions. The precursors were bubbled into a CVD assemblage and then reacted with ammonia at temperatures between 400 and 700 °C. The depositions onto silicon substrates were pyramidal particles of 100 nm width at the base and up to 55 nm in height. The rise in growth temperature increased particle density from 0.9 to 27.1 particles per square micron, but reduced the height from 50 to 10 or 2 nm. XPS spectra showed the presence of gallium and nitrogen. The intensity of the gallium spectrum decreased as the process te...
Abstract: A novel single precursor, bis(dimethylgal1ium-di-p-isopropoxo)zinc which contains zinc, ga...
GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous qua...
Low-temperature growth of crystalline gallium nitride (GaN) films on <i>c</i>-plane sapphire (α-Al<s...
An attempt to prepare a metalorganic precursor of gallium with reactivity at low temperature in chem...
We have studied the growth of gallium nitride on c-plane sapphire substrates. The layers were grown ...
The GaNAs alloys have been grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhyd...
"GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous qu...
Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of...
Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of...
Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of...
Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of...
Low-temperature growth of crystalline gallium nitride (GaN) films on c-plane sapphire (α-Al2O3) subs...
GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy...
The thermal decomposition of a gall ium tr ibromide-ammonia complex in an ammonia, argon, or nitroge...
Gallium trichloride (GaCl3) and azidotrimethylsilane (CH3)3SiN3 were employed as alternatives galliu...
Abstract: A novel single precursor, bis(dimethylgal1ium-di-p-isopropoxo)zinc which contains zinc, ga...
GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous qua...
Low-temperature growth of crystalline gallium nitride (GaN) films on <i>c</i>-plane sapphire (α-Al<s...
An attempt to prepare a metalorganic precursor of gallium with reactivity at low temperature in chem...
We have studied the growth of gallium nitride on c-plane sapphire substrates. The layers were grown ...
The GaNAs alloys have been grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhyd...
"GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous qu...
Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of...
Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of...
Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of...
Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of...
Low-temperature growth of crystalline gallium nitride (GaN) films on c-plane sapphire (α-Al2O3) subs...
GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy...
The thermal decomposition of a gall ium tr ibromide-ammonia complex in an ammonia, argon, or nitroge...
Gallium trichloride (GaCl3) and azidotrimethylsilane (CH3)3SiN3 were employed as alternatives galliu...
Abstract: A novel single precursor, bis(dimethylgal1ium-di-p-isopropoxo)zinc which contains zinc, ga...
GaN rods were deposited by chemical vapor deposition (CVD) onto sapphire (0 0 0 1) and amorphous qua...
Low-temperature growth of crystalline gallium nitride (GaN) films on <i>c</i>-plane sapphire (α-Al<s...