none6noThe effect of non-parabolic energy-bands on the electrical properties of an In0.53Ga0.47As/In0.52Al0.48As superlattice FET has been investigated. An energy dependent effective mass was fitted on k · p simulation results and the new band model was implemented into a self-consistent Schrödinger-Poisson solver. This analysis has shown that non-parabolicity effects lead to noticeable changes of the device characteristics with respect the parabolic band model, namely: an increase of the on-state current and a steeper transition from the off- to the on-state sustained across several decades of current, at the expense of an increased off-state leakage. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of ...
We use a state-of-the-art non-equilibrium quantum transport simulation code, NEMO-ID, to address the...
In this work we investigate by numerical simulation the achievable performance of a steep-slope nano...
The capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-sem...
The effect of non-parabolic energy-bands on the electrical properties of an In0.53Ga0.47As/In0.52Al0...
none6noThe effect of non-parabolic energy-bands on the electrical properties of an InGaAs/InAlAs sup...
We have investigated analytically the influence of band non-parabolicity on the quantized gate cap...
In this paper, the band-structure of ultra-thin body (UTB) double-gate (DG) MOSFETs is calculated by...
Thanks to their formidable electron transport properties, III–V compound semiconductors have establi...
We have measured the cross-plane Seebeck coefficient of short period InGaAs/InAlAs superlattices wit...
We studied the effects caused by Joule heating in GaAs/AlAs superlattices. We measured the current–v...
© 2017 IEEE. I. Introduction The growing demand for power efficient devices has accelerated the rese...
We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). Th...
Accurate Schrödinger-Poisson and Multi-Subband Monte Carlo simulations are used to investigate the e...
The first part of this thesis is a study of thermally activated conduction, Hall effect, and Far-Inf...
International audienceThe aim of this study is to investigate the impact of multiband corrections on...
We use a state-of-the-art non-equilibrium quantum transport simulation code, NEMO-ID, to address the...
In this work we investigate by numerical simulation the achievable performance of a steep-slope nano...
The capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-sem...
The effect of non-parabolic energy-bands on the electrical properties of an In0.53Ga0.47As/In0.52Al0...
none6noThe effect of non-parabolic energy-bands on the electrical properties of an InGaAs/InAlAs sup...
We have investigated analytically the influence of band non-parabolicity on the quantized gate cap...
In this paper, the band-structure of ultra-thin body (UTB) double-gate (DG) MOSFETs is calculated by...
Thanks to their formidable electron transport properties, III–V compound semiconductors have establi...
We have measured the cross-plane Seebeck coefficient of short period InGaAs/InAlAs superlattices wit...
We studied the effects caused by Joule heating in GaAs/AlAs superlattices. We measured the current–v...
© 2017 IEEE. I. Introduction The growing demand for power efficient devices has accelerated the rese...
We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). Th...
Accurate Schrödinger-Poisson and Multi-Subband Monte Carlo simulations are used to investigate the e...
The first part of this thesis is a study of thermally activated conduction, Hall effect, and Far-Inf...
International audienceThe aim of this study is to investigate the impact of multiband corrections on...
We use a state-of-the-art non-equilibrium quantum transport simulation code, NEMO-ID, to address the...
In this work we investigate by numerical simulation the achievable performance of a steep-slope nano...
The capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-sem...