Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
- M. BEGOTTI
- M. LONGO
- R. MAGNANINI
- A. PARISINI
- L. TARRICONE
- C. BOCCHI
- F. GERMINI
- L. LAZZARINI
- L. NASI
- GEDDO, MARIO
Publication date
January 2004
DOI Publisher
Elsevier BV ISSN
0169-4332 Citation count (estimate)
13Abstract
Lattice-matched, single and multiple InGaP/GaAs/InGaP quantum wells (QWs) were grown at 600 8C by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE), with the use of the tertiarybuthylarsine (TBAs) and tertiarybuthylphosphine (TBP) group-V sources. In order to enhance the interface abruptness, different gas switching sequences were exploited during the growth of the interface, and the best results were obtained by inserting a few monolayer-thick GaAsP interlayers (IL), at the direct GaAs-on-InGaP interface
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