The optical properties of CrSi2, both in polycrystalline and single-crystal form, were investigated between 0.01 and 5 eV. The dielectric functions were determined by different methods: Kramers-Kronig transformations of the near-normal reflectivity over the whole spectral range; direct measurement by spectroscopic ellipsometry from 1.4 to 5 eV; numerical inversion of the reflectance from two films with different thickness. The main difference between thin-film and single-crystal data is the presence, in the latter, of a strong free-carrier response, preventing the determination of the intrinsic absorption edge (interband optical gap). Moreover, the optical properties of CrSi2 were calculated within the local-density approximation using the ...
We present synchrotron radiation photoemission studies of bulk CrSi2 and silicide phases grown on Si...
AbstractIn this work buried nanocrystalline CrSi2 layers were synthesized by ion implantation, pulse...
CrSi2 is an important refractory metal-silicide with high thermal power and a narrow bandgap which m...
The optical properties of CrSi2, both in polycrystalline and single-crystal form, were investigated ...
We present and discuss reflectance and trasmittance measurements on CrSi_2 an FeSi_2 polycristalline...
We present and discuss reflectance and trasmittance measurements on CrSi, polycrystalline films in t...
International audienceWe report a complete study of the lattice dynamics, dielectric, elastic and pi...
The structure and morphology of chromium disilicide (CrSi2) nanometric films grown on 〈1 0 0〉 silico...
Stoichiometric $CrSi_2$ was prepared by arc melting and compacted by uniaxial hot pressing for prope...
We investigated the electronic and magnetic properties of bulk and monolayer CrSi2 using first-princ...
The ambiguous binding energy (BE) shift of the Cr 2p3/2 peak of chromium disilicide with respect to ...
The reflectivity at room temperature and the absorption coefficient at room temperature, 77°K and 12...
CrSi2 which crystallizes in the hexagonal C40 structure type is reported to be a semiconductor with ...
We present both theoretical and experimental investigations of electronic and optical properties of ...
The changes in the morphology and the electrophysical properties of the Cr/n-Si (111) structure depe...
We present synchrotron radiation photoemission studies of bulk CrSi2 and silicide phases grown on Si...
AbstractIn this work buried nanocrystalline CrSi2 layers were synthesized by ion implantation, pulse...
CrSi2 is an important refractory metal-silicide with high thermal power and a narrow bandgap which m...
The optical properties of CrSi2, both in polycrystalline and single-crystal form, were investigated ...
We present and discuss reflectance and trasmittance measurements on CrSi_2 an FeSi_2 polycristalline...
We present and discuss reflectance and trasmittance measurements on CrSi, polycrystalline films in t...
International audienceWe report a complete study of the lattice dynamics, dielectric, elastic and pi...
The structure and morphology of chromium disilicide (CrSi2) nanometric films grown on 〈1 0 0〉 silico...
Stoichiometric $CrSi_2$ was prepared by arc melting and compacted by uniaxial hot pressing for prope...
We investigated the electronic and magnetic properties of bulk and monolayer CrSi2 using first-princ...
The ambiguous binding energy (BE) shift of the Cr 2p3/2 peak of chromium disilicide with respect to ...
The reflectivity at room temperature and the absorption coefficient at room temperature, 77°K and 12...
CrSi2 which crystallizes in the hexagonal C40 structure type is reported to be a semiconductor with ...
We present both theoretical and experimental investigations of electronic and optical properties of ...
The changes in the morphology and the electrophysical properties of the Cr/n-Si (111) structure depe...
We present synchrotron radiation photoemission studies of bulk CrSi2 and silicide phases grown on Si...
AbstractIn this work buried nanocrystalline CrSi2 layers were synthesized by ion implantation, pulse...
CrSi2 is an important refractory metal-silicide with high thermal power and a narrow bandgap which m...