We report on the characterization by a position resolved laser system of small-pitch 3D diodes irradiated with neutrons up to an extremely high fluence of 3.5 × 1016 neq cm−2. We show that very high values of signal efficiency are obtained, in good agreement with the geometrical expectation based on the small values of the inter-electrode spacings, and also boosted by charge multiplication effects at high voltage. These results confirm the very high radiation tolerance of small-pitch 3D sensors well beyond the maximum fluences expected at the High Luminosity LH
In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors ...
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazio...
Three-dimensional (3D) silicon detectors offer advantages over standard planar devices as more radia...
We report on the characterization by a position resolved laser system of small-pitch 3D diodes irrad...
In view of applications in the tracking detectors at the High Luminosity LHC (HL-LHC), we have devel...
In the past two years, we have developed 3D detector technologies at ITC-irst (Trento, Italy). We ha...
: We present a study on the radiation tolerance and timing properties of 3D diamond detectors fabric...
We report on the characterization of a new version of double-sided 3D sensors fabricated at FBK (Tre...
3D Si radiation sensors came along with extreme radiation hard properties, primarily owing to the ge...
Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are...
3D type of pixel sensors is a promising option for the innermost pixel layer at the High-Luminosity ...
In this paper, we report on the characterization of silicon 3D and planar sensors, coupled with diff...
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazio...
Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are...
The properties of 50 µm thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu ph...
In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors ...
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazio...
Three-dimensional (3D) silicon detectors offer advantages over standard planar devices as more radia...
We report on the characterization by a position resolved laser system of small-pitch 3D diodes irrad...
In view of applications in the tracking detectors at the High Luminosity LHC (HL-LHC), we have devel...
In the past two years, we have developed 3D detector technologies at ITC-irst (Trento, Italy). We ha...
: We present a study on the radiation tolerance and timing properties of 3D diamond detectors fabric...
We report on the characterization of a new version of double-sided 3D sensors fabricated at FBK (Tre...
3D Si radiation sensors came along with extreme radiation hard properties, primarily owing to the ge...
Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are...
3D type of pixel sensors is a promising option for the innermost pixel layer at the High-Luminosity ...
In this paper, we report on the characterization of silicon 3D and planar sensors, coupled with diff...
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazio...
Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are...
The properties of 50 µm thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu ph...
In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors ...
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazio...
Three-dimensional (3D) silicon detectors offer advantages over standard planar devices as more radia...