Spin-dependent resonant tunneling in semiconductor nanostructures

The spin-dependent quantum transport of electrons in non magnetic III-V semiconductor nanostructures is studied theoretically within the envelope function approximation and the Kane model for the bulk. It is shown that an unpolarized beam of conducting electrons can be strongly polarized in zero magnetic field by resonant tunneling across asymmetric double-barrier structures, as an effect of the spin-orbit interaction. The electron transmission probability is calculated as a function of energy and angle of incidence. Specific results for tunneling across lattice matched politype Ga0.47In0.53As/ InP/Ga(0.47)In(0.53)AS / GaAs0.5Sb0.5 / Gao(0.47)In(0.53)As double barrier heterostructures show sharp spin split resonances, corresponding to resonant tunneling through spin-orbit split quasi-bound electron states. The polarization of the transmitted beam is also calculated and is shown to be over 50%