3D silicon pixel sensors: Recent test beam results
- Hansson P.
- Balbuena J.
- Barrera C.
- Bolle E.
- Borri M.
- Chmeissan M.
- Dalla Betta G. F.
- Darbo G.
- Da Via C.
- Devetak E.
- DeWilde B.
- Su D.
- Dorholt O.
- Fazio S.
- Fleta C.
- Gemme C.
- Giordani M.
- Gjersdal H.
- Grenier P.
- Grinstein S.
- Hasi J.
- Helle K.
- Huegging F.
- Jackson P.
- Kenney C.
- Kocian M.
- Korolkov I.
- La Rosa A.
- Mastroberardino A.
- Micelli A.
- Nellist C.
- Nordahl P.
- Rivero F.
- Rohne O.
- Sandaker H.
- Silverstein D.
- Sjoebaek K.
- Slaviec T.
- Stupak J.
- Troyano I.
- Tsung J.
- Tsybychev D.
- Wermes N.
- Young C.
- Boscardin, Maurizio
DOIAbstract
The 3D silicon sensors aimed for the ATLAS pixel detector upgrade have been tested with a high energy pion beam at the CERN SPS in 2009. Two types of sensor layouts were tested: full-3D assemblies fabricated in Stanford, where the electrodes penetrate the entire silicon wafer thickness, and modified-3D assemblies fabricated at FBK-irst with partially overlapping electrodes. In both cases three read-out electrodes are ganged together to form pixels of dimension View the MathML source. Data on the pulse height distribution, tracking efficiency and resolution were collected for various particle incident angles, with and without a 1.6 T magnetic field. Data from a planar sensor of the type presently used in the ATLAS detector were used at the s...
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