Plasma based transfer of photoresist _PR_ patterns into underlying films and substrates is basic to micro- and nanofabrication but can suffer from excessive surface and line edge roughness in the photoresist and resulting features. The authors have studied the interaction of a set of adamantyl methacrylate-based model polymers with fluorocarbon/Ar discharges and energetic Ar+ ion beams. Through systematic variation of the polymer structure, the authors were able to clarify the contributions of several critical polymer components on the chemical and morphological modifications in the plasma environment. Etching rates and surface chemical and morphological changes for the model polymers and fully formulated 193 and 248 nm photoresists ...
Photolithographic patterning of photoresist materials and transfer of these images into electronic m...
Selectively plasma-etched polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer ...
Poly(acrylic acid) (PAAc) films were treated with either an argon or a tetrafluoromethane (CF4) plas...
Plasma processing of advanced photoresist (PR) materials is a critical step in nano-manufacturing. W...
The use of e-beam based plasma as a source for plasma-polymer interactions was investigated employin...
The controlled patterning of polymer resists by plasma plays an essential role in the fabrication of...
The use of e-beam based plasma as a source for plasma-polymer interactions was investigated employin...
Low temperature plasma-based processes are used extensively in many modern technologies. It is thus ...
Low temperature plasma-based processes are used extensively in many modern technologies. It is thus ...
As the device dimensions scale to 100 nm, the use of photoresist materials is suitable for lithogra...
The controlled patterning of polymer resists by plasma plays an essential role in the fabrication of...
Among various surface modification techniques, plasma can be used as a source for tailoring the surf...
Polymers have been applied successfully in fields such as adhesion, biomaterials, protective coating...
Photoresist (PR) materials undergo significant physical and chemical modification from the ions, vac...
Abstract- Etching and modification of polymers by plasmas is discussed in terms of the roles played ...
Photolithographic patterning of photoresist materials and transfer of these images into electronic m...
Selectively plasma-etched polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer ...
Poly(acrylic acid) (PAAc) films were treated with either an argon or a tetrafluoromethane (CF4) plas...
Plasma processing of advanced photoresist (PR) materials is a critical step in nano-manufacturing. W...
The use of e-beam based plasma as a source for plasma-polymer interactions was investigated employin...
The controlled patterning of polymer resists by plasma plays an essential role in the fabrication of...
The use of e-beam based plasma as a source for plasma-polymer interactions was investigated employin...
Low temperature plasma-based processes are used extensively in many modern technologies. It is thus ...
Low temperature plasma-based processes are used extensively in many modern technologies. It is thus ...
As the device dimensions scale to 100 nm, the use of photoresist materials is suitable for lithogra...
The controlled patterning of polymer resists by plasma plays an essential role in the fabrication of...
Among various surface modification techniques, plasma can be used as a source for tailoring the surf...
Polymers have been applied successfully in fields such as adhesion, biomaterials, protective coating...
Photoresist (PR) materials undergo significant physical and chemical modification from the ions, vac...
Abstract- Etching and modification of polymers by plasmas is discussed in terms of the roles played ...
Photolithographic patterning of photoresist materials and transfer of these images into electronic m...
Selectively plasma-etched polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer ...
Poly(acrylic acid) (PAAc) films were treated with either an argon or a tetrafluoromethane (CF4) plas...