Add to ORKGWe report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for asizeable enhancement in the JFET performance. In this paper, the main features of the fabrication technology are presented and selected results from the electrical and noise characterization of transistors are discussed
We describe our experience on design and fabrication, on high-resistivity silicon substrates, of mic...
In connection with a research project for developing room temperature energy dispersive detectors fo...
We report on the most recent results from an R&D activity aimed at the development of silicon radiat...
We report on the development of a radiation-detector compatible JFET technology on high-resistivity ...
We report on an improved fabrication technology allowing n-JFET/n-MOSFET charge sensitive amplifiers...
This paper presents the design and experimental results relevant to front-end circuits integrated on...
We have largely improved the performance of our detector-compatible Si JFETs by optimizing the fabri...
We report on the latest results obtained from the development of a fabrication technology for PIN ra...
We report on the design of an n-channel Junction Field Effect Transistor (JFET) on fully-depleted, h...
We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high...
We report on the design of an n-channel Junction Field Effect Transistor (JFET) on fully-depleted, h...
On présente le projet d'une nouvelle classe de transistors à effet de champ à jonction JFETs, conçue...
We report on n-channel Junction Field Effect Transistors fabricated on high resistivity silicon by ...
We describe our experience on design and fabrication, on high-resistivity silicon substrates, of mic...
In the past few years we have developed a technological process allowing for the fabrication of radi...
We describe our experience on design and fabrication, on high-resistivity silicon substrates, of mic...
In connection with a research project for developing room temperature energy dispersive detectors fo...
We report on the most recent results from an R&D activity aimed at the development of silicon radiat...
We report on the development of a radiation-detector compatible JFET technology on high-resistivity ...
We report on an improved fabrication technology allowing n-JFET/n-MOSFET charge sensitive amplifiers...
This paper presents the design and experimental results relevant to front-end circuits integrated on...
We have largely improved the performance of our detector-compatible Si JFETs by optimizing the fabri...
We report on the latest results obtained from the development of a fabrication technology for PIN ra...
We report on the design of an n-channel Junction Field Effect Transistor (JFET) on fully-depleted, h...
We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high...
We report on the design of an n-channel Junction Field Effect Transistor (JFET) on fully-depleted, h...
On présente le projet d'une nouvelle classe de transistors à effet de champ à jonction JFETs, conçue...
We report on n-channel Junction Field Effect Transistors fabricated on high resistivity silicon by ...
We describe our experience on design and fabrication, on high-resistivity silicon substrates, of mic...
In the past few years we have developed a technological process allowing for the fabrication of radi...
We describe our experience on design and fabrication, on high-resistivity silicon substrates, of mic...
In connection with a research project for developing room temperature energy dispersive detectors fo...
We report on the most recent results from an R&D activity aimed at the development of silicon radiat...