We present a new 3D detector architecture aimed at simplifying the manufacturing process making it more suitable for high volume production. In particular, the proposed device features electrodes of one doping type only, e.g., n+ columns in a p-type substrate. We report on TCAD simulation results providing deep insight into the static and dynamic behavior of this detector, highlighting its advantages and potential drawbacks. The fabrication process we intend to use is also described along with results from the morphological characterization of the most critical technological steps
Fabrication routes to realising '3D' detectors in gallium arsenide have been investigated and their ...
Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetra...
Fabrication routes to realising ‘3D ’ detectors in gallium arsenide (GaAs) have been investigated an...
Recently, we presented a new 3D detector architecture aimed at simplifying the manufacturing process...
We report on the main design and technological issues related to a modified 3D-DTTC (Double-side, Do...
A new ldquodouble sidedrdquo 3-D solid-state detector structure, intended to simplify the 3-D fabric...
The 3D silicon radiation detectors are very promising devices to be used in environments requiring e...
We report on the latest results from the development of 3-D silicon radiation detectors at Fondazion...
3D detectors are photodiode radiation detectors with n- and p-type electrode columns passing through...
We report on the latest results from the development of 3D silicon radiation detectors at IRST (Tren...
The search for new semiconductor detectors has led to interesting developments in recent years. As w...
A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is ...
The work presented here is the result of the collaborative effort between the University of Glasgow,...
The fabrication of 3D detectors which requires bulk micromachining of columnar electrodes has been r...
Various fabrications routes to create '3D' detectors have been investigated and the electrical chara...
Fabrication routes to realising '3D' detectors in gallium arsenide have been investigated and their ...
Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetra...
Fabrication routes to realising ‘3D ’ detectors in gallium arsenide (GaAs) have been investigated an...
Recently, we presented a new 3D detector architecture aimed at simplifying the manufacturing process...
We report on the main design and technological issues related to a modified 3D-DTTC (Double-side, Do...
A new ldquodouble sidedrdquo 3-D solid-state detector structure, intended to simplify the 3-D fabric...
The 3D silicon radiation detectors are very promising devices to be used in environments requiring e...
We report on the latest results from the development of 3-D silicon radiation detectors at Fondazion...
3D detectors are photodiode radiation detectors with n- and p-type electrode columns passing through...
We report on the latest results from the development of 3D silicon radiation detectors at IRST (Tren...
The search for new semiconductor detectors has led to interesting developments in recent years. As w...
A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is ...
The work presented here is the result of the collaborative effort between the University of Glasgow,...
The fabrication of 3D detectors which requires bulk micromachining of columnar electrodes has been r...
Various fabrications routes to create '3D' detectors have been investigated and the electrical chara...
Fabrication routes to realising '3D' detectors in gallium arsenide have been investigated and their ...
Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetra...
Fabrication routes to realising ‘3D ’ detectors in gallium arsenide (GaAs) have been investigated an...