Effects of boron-interstitial silicon clusters on interstitial supersaturation during post-implantation annealing

Boron marker-layer structures have been used to investigate the effects of B doping on the evolution of the implantation damage and of the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the range 2x1013 – 1x1014 cm-2 and annealed at 740ºC for times between 2 s and 4 hrs. The values of interstitial supersaturation, from the beginning of the annealing up to the complete damage recovery, have been determined for the different Si doses for a given B doping level. Damage removal has been followed by double crystal x-ray diffraction. Our results confirm that the formation of boron-interstitial silicon cluster (BICs) traps a relevant fraction of the interstitials produced by the implantation. This trapping action gives rise to a strong reduction of the interstitial supersaturation, prevents the interstitial clusters from being transformed in {113} defects and modifies the time evolution of the TED. X-ray analyses indicate also that the size of the BICs remain below 2 n