Electro-optical characterization of high-speed silicon PIN photodiodes

This paper describes the performance of PIN photodiodes fabricated at IRST, aimed at X-ray imaging applications. A high responsivity as well as a low leakage current and capacitance, suitable to obtain a high signal-to-noise ratio, have been proved by experimental measurements. The fast pulse detection capabilities have also been demonstrated, exciting the detector with a Nd:YAG laser having a pulse width lower than 35p