Investigation of conductive-bridging random-access memory (cbram) properties

It was thought that CBRAM memory is one of the most perspective new memory types, which has the potential to surpass the most commonly used flash memory. That is because CBRAM memory is based on forming very small filaments in a dielectric material between two electrodes. These filaments can be formed in a very short time, in a couple of nano seconds and also they are very thin, a few nano meters wide. Because of that the writing speed of the memory should be very high as well as the density. A model was created so we could use both memories. A program has been written which allows us to determine the needed characteristics. The times at which the data is written in both memories and data writing cycles were measured. It was observed that in the CBRAM memory errors appear much sooner than in flash memory. The dependency between new errors appearing and data rewriting cycles was determined. Also it was observed that the errors can be fixed. The numbers of how many rewriting cycles must pass for the memory cell to be fixed was found. Its dependency with the number of how many times the memory cell was fixed has been determined. Lastly the energy used when writing data in was measured in both memory types. When these characteristics were compared it was observed that the amount of correct rewriting cycles in CBRAM memory is much lower than the amount of rewriting cycles in flash memory. In the start of the experiments CBRAM demonstrated much lower data writing times (15 times lower than in flash memory) this advantage soon disappears because at the moment when the first errors appeared this time started growing rapidly. Also it was measured that the energy used for data writing in CBRAM memory is 145 times lower than the energy used in flash memory. Considering these results it was concluded that CBRAM memory is not capable of replacing flash memory, at least at this time