Elektrocheminis Cu-Zn-Sn pirmtako nusodinimas ir Cu2ZnSnSe4 saulės elemento formavimas

In this study Cu2ZnSnSe4 (CZTSe) solar cells have been formed by selenizing electrochemically deposited Cu-Zn-Sn (CZT) precursor. Two approaches have been presented for forming CZT precursor: a) co-deposition of Cu-Zn-Sn and stacked Cu, Sn, Zn layer deposition using flow cell. Deposition parameters (deposition potential, current density, electrolyte composition, flow rate) were optimized in order to obtain well-adherent to Mo substrate, uniform in thickness and composition CZT precursor layers. The detailed SEM combined with EDX investigation of CZT precursor morphology, cross-section and composition have been carried out. CZT precursors were preliminary annealed at 200 – 350 °C temperature in order to reduce film porosity and to form intermetallic compounds. The XRD and XRD in situ methods have been applied to investigate the formation of intermetallic compound of as-deposited and preheated CZT precursors. The influence of initial CZT composition and selenization conditions (temperature, duration, amount of Se) on the CZTSe morphology, phase composition and CZTSe solar cell performance has been investigated. Cu-poor, Zn-rich composition and preheating of CZT precursor was necessary to obtain relatively efficient CZTSe solar cells