Progress on III-V-Bi Alloys and Light Emitting Devices
- Wang, Shu Min
- Yue, L.
- Wang, L
- Zhang, Yanchao
- Wang, Chang
- Zhang, Xiaolei
- Chi, Chaodan
- Liang, Hao
- Wu, Xiaoyan
- Liu, J. J.
- Pan, W. W.
- Cao, Chunfang
- Li, Y
Publication date
January 2018
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this invited talk, we will present some recent progresses on epitaxial growth of III-V-Bi alloys and light emitting devices. Aluminum containing bismides including AlAsBi and AlSbBi have been epitaxially grown for the first time and their physical properties will be reported. New designs of using delta-doping in quantum wells are investigated to effectively extend light emission wavelength. Finally, GaAs based light emitting diode will be presented
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