We propose in this paper a procedure to obtain SPICE MOSFET Model Level 1 parameters from SPICE MOSFET Model Level 49. Our proposed method follows a general curve fitting strategy using numerical optimization to extract the SPICE level 1 parameters from the characteristic curves of the corresponding MOSFET using SPICE level 49 model. The optimization procedure is described, including the definition of the objective function. We also review a classical method widely used for SPICE Model Level 1 parameter extraction based on linear regression. A comparison of the two methods is realized in terms of accuracy of the resultant models. Our proposed method for parameter extraction proves to be more accurate
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
An optimal design of semiconductor device and its process uniformity are critical factors affecting ...
The technique of extraction and identification of electrical models parameters for nanoscale semicon...
The extraction of MOS model parameters for circuit simulation has received considerable attention in...
A general, direct parameter extraction algorithm that uses a small number of data points has been de...
Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits...
A fast method of parameter extraction using a limited number of data points is developed for the SPI...
This paper proposes new method for optimize and verified electric characterization graph of MOSFET b...
This paper presents a proposed new structure of the power MOSFET model and its implementation in the...
The optimization is an indispensable tool for extracting the parameters of any complicated models. H...
Efficient DC parameter extraction technique for MOS Model 11, level 1100 (MM11) is outlined. The par...
A general strategy for direct extraction of MOS transistor DC parameters using only a small number o...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
In this paper, parameter extraction for PSP MOSFET model is demonstrated using Particle Swarm Optimi...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
An optimal design of semiconductor device and its process uniformity are critical factors affecting ...
The technique of extraction and identification of electrical models parameters for nanoscale semicon...
The extraction of MOS model parameters for circuit simulation has received considerable attention in...
A general, direct parameter extraction algorithm that uses a small number of data points has been de...
Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits...
A fast method of parameter extraction using a limited number of data points is developed for the SPI...
This paper proposes new method for optimize and verified electric characterization graph of MOSFET b...
This paper presents a proposed new structure of the power MOSFET model and its implementation in the...
The optimization is an indispensable tool for extracting the parameters of any complicated models. H...
Efficient DC parameter extraction technique for MOS Model 11, level 1100 (MM11) is outlined. The par...
A general strategy for direct extraction of MOS transistor DC parameters using only a small number o...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
In this paper, parameter extraction for PSP MOSFET model is demonstrated using Particle Swarm Optimi...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
An optimal design of semiconductor device and its process uniformity are critical factors affecting ...