Crystal structure of a large period polytype as well as some complex polytypes like 40H, 150R, and their intergrowth structures have been determined on the basis of one dimensional lattice images and confirmed finally by establishing a match between observed and calculated X-ray intensities. Tilted beam two dimensional lattice images using selected reflections to produce chevron shaped fringes (by deriving first the imaging conditions in case of a simple structure 6H) simulating layer stacking sequence have been used to determine the structure of a new large period polytype 411R and its intergrowth structures. Critical evaluation of these techniques for structure determination has been discussed. A notable feature emerging from the lattice ...
This paper describes an unusual silicon carbide crystal of special crystallographic interest. During...
[[abstract]]Phase-sensitive synchrotron radiation (SR) radiography was combined with x-ray diffracti...
Single crystals of 2H SiC grown by hydrogen reduction of methyltrichlorosilane at 1400°C frequently ...
A brief review of the phenomenon of polytypism is presented and its prolific abundance in Silicon Ca...
A number of silicon carbide crystals, some new polytypes, have been studied. Phasecontrast microscop...
International audienceThe matrix of SiC/SiC composites has been observed by electron energy loss spe...
Structural defects and degree of order of natural and synthetic moissanite have been investigated by...
The improved resolution of synchrotron edge-topography is enabling thinner (less than 100 microns), ...
Frank's dislocation theory of the origin of polytypism received direct experimental support from the...
In recent years, defect characterisation of SiC polytypes has been developed significantly, due to ...
Crystals of polytypic materials often contain a high concentration of stacking faults giving rise to...
Neutron and X-ray diffraction patterns of α and β powders as well as of sintered SiC were analysed b...
A significant gap in our understanding of polytypism exists, caused partly by the lack of experiment...
Several materials with a close packed structure, like ZnS and SiC, are known to undergo solid state ...
The layer widths and repeat spacing of long-period polytypes (LPPs) have been determined using synch...
This paper describes an unusual silicon carbide crystal of special crystallographic interest. During...
[[abstract]]Phase-sensitive synchrotron radiation (SR) radiography was combined with x-ray diffracti...
Single crystals of 2H SiC grown by hydrogen reduction of methyltrichlorosilane at 1400°C frequently ...
A brief review of the phenomenon of polytypism is presented and its prolific abundance in Silicon Ca...
A number of silicon carbide crystals, some new polytypes, have been studied. Phasecontrast microscop...
International audienceThe matrix of SiC/SiC composites has been observed by electron energy loss spe...
Structural defects and degree of order of natural and synthetic moissanite have been investigated by...
The improved resolution of synchrotron edge-topography is enabling thinner (less than 100 microns), ...
Frank's dislocation theory of the origin of polytypism received direct experimental support from the...
In recent years, defect characterisation of SiC polytypes has been developed significantly, due to ...
Crystals of polytypic materials often contain a high concentration of stacking faults giving rise to...
Neutron and X-ray diffraction patterns of α and β powders as well as of sintered SiC were analysed b...
A significant gap in our understanding of polytypism exists, caused partly by the lack of experiment...
Several materials with a close packed structure, like ZnS and SiC, are known to undergo solid state ...
The layer widths and repeat spacing of long-period polytypes (LPPs) have been determined using synch...
This paper describes an unusual silicon carbide crystal of special crystallographic interest. During...
[[abstract]]Phase-sensitive synchrotron radiation (SR) radiography was combined with x-ray diffracti...
Single crystals of 2H SiC grown by hydrogen reduction of methyltrichlorosilane at 1400°C frequently ...