The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample. © 1999 IEEE
The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surf...
By exploring the simple periodic heat-flow principle of the photoacoustic cell we demonstrate experi...
The photoacoustic (PA) signal should generally change with the extent of damage, in the form of sur...
The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on t...
We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial lay...
Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic...
An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal ...
The photoacoustic signal of two semiconductor samples is investigated as a function of the modulatio...
Abstract. Since the early seventies, photoacoustic has been emerged as a well suited technique for t...
The photoacoustic signal of a narrow-gap semiconductor and of Si is investigated as a function of th...
A one-dimensional model to investigate the photoacoustic (PA) generation and depth profiling in mult...
Since the early seventies, photoacoustic has been emerged as a well suited technique for the measure...
New information on mechanisms of photoacoustical effect formation in chalcogenide glass-like semicon...
Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigat...
In this paper a new and practical model for the determination of transport parameters of crystalline...
The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surf...
By exploring the simple periodic heat-flow principle of the photoacoustic cell we demonstrate experi...
The photoacoustic (PA) signal should generally change with the extent of damage, in the form of sur...
The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on t...
We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial lay...
Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic...
An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal ...
The photoacoustic signal of two semiconductor samples is investigated as a function of the modulatio...
Abstract. Since the early seventies, photoacoustic has been emerged as a well suited technique for t...
The photoacoustic signal of a narrow-gap semiconductor and of Si is investigated as a function of th...
A one-dimensional model to investigate the photoacoustic (PA) generation and depth profiling in mult...
Since the early seventies, photoacoustic has been emerged as a well suited technique for the measure...
New information on mechanisms of photoacoustical effect formation in chalcogenide glass-like semicon...
Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigat...
In this paper a new and practical model for the determination of transport parameters of crystalline...
The photoacoustic (PA) signal should generally change with the extent of damage, in the form of surf...
By exploring the simple periodic heat-flow principle of the photoacoustic cell we demonstrate experi...
The photoacoustic (PA) signal should generally change with the extent of damage, in the form of sur...