[[abstract]]The ion-beam channeling technique has been used to characterize the interface and the first few layers of [100] GaSb/AlSb superlattice structures. Strain caused by alternating tensile and compressive stress has been detected by measuring the oscillation of the [110]-aligned direction with depth. From the angular displacement and its oscillation, the amount of strain in the superlattice has been determined directly.[[incitationindex]]SCI[[booktype]]紙本[[booktype]]電子
The structural characterization of mismatched epitaxial heterostructures requires at least the deter...
Strain measurements in Al_xGa_(1−x) As/GaAs superlattices have been carried out before and after Si ...
Channeling with high-energy He or H ions offers enhanced angular resolution since the characteristic...
[[abstract]]Owing to the lattice mismatch between GaSb and AlSb, a superlattice consisting of altern...
abstract: Atomic resolution transmission electron microscopy is performed to examine the strain dist...
40 MeV Si channeling studies have been performed on the strained In0.1Ga0.9As layer grown on GaAs su...
We have used reflection high‐energy electron diffraction to study the surface periodicity of the gro...
The influence of the beam energy on the determination of strain state with ion channeling in GaN-bas...
The influence of the beam energy on the determination of strain state with ion channeling in GaN-bas...
Axial and planar MeV ion-channeling experiments are performed on a InAs/GaAs superlattice with ten c...
The purpose of this study is to investigate the role of strain in the accumulation of crystalline d...
We present detailed analyses of x-ray double-crystal rocking curve measurements of superlattices. Th...
This paper describes the experimental and theoretical simulation, the observation and the quantifica...
The structural characterization of mismatched epitaxial heterostructures requires at least the deter...
Strain measurements in Al_xGa_(1−x) As/GaAs superlattices have been carried out before and after Si ...
Channeling with high-energy He or H ions offers enhanced angular resolution since the characteristic...
[[abstract]]Owing to the lattice mismatch between GaSb and AlSb, a superlattice consisting of altern...
abstract: Atomic resolution transmission electron microscopy is performed to examine the strain dist...
40 MeV Si channeling studies have been performed on the strained In0.1Ga0.9As layer grown on GaAs su...
We have used reflection high‐energy electron diffraction to study the surface periodicity of the gro...
The influence of the beam energy on the determination of strain state with ion channeling in GaN-bas...
The influence of the beam energy on the determination of strain state with ion channeling in GaN-bas...
Axial and planar MeV ion-channeling experiments are performed on a InAs/GaAs superlattice with ten c...
The purpose of this study is to investigate the role of strain in the accumulation of crystalline d...
We present detailed analyses of x-ray double-crystal rocking curve measurements of superlattices. Th...
This paper describes the experimental and theoretical simulation, the observation and the quantifica...
The structural characterization of mismatched epitaxial heterostructures requires at least the deter...
Strain measurements in Al_xGa_(1−x) As/GaAs superlattices have been carried out before and after Si ...
Channeling with high-energy He or H ions offers enhanced angular resolution since the characteristic...