含carbazole基矽氧高分子之合成及其電荷移 轉錯體之性質

[[abstract]]合成一系列含Carbazole之不同次甲基長度的 聚矽氧烷聚合物,其TG隨側鏈長度之增加而由 45.degree.C降至-10.degree.C,含 Carbazole聚矽氧烷聚合 物與DNB壓克力系聚合物,兩者間無法互容,以低分 子量的EDNB來摻合以形成EDA錯體,其CT BAND吸收在 可視光區出現,而且Aromatic H-NMR的化學位移會因 錯體之形成而位移,且隨錯合程度之降低改變。 EDA錯體之Tg則會隨EDNB成分所加入之量的增加而 增加,產生類似反可塑化作用的效果。求得此 EDA錯體之平衡常數為0.35l/mole及錯合物之錯合百 分比,得較佳之錯合百分比為當摻合比例為 EDNB:PMPrS-Cz 0.1:1時之49%為最高。[[abstract]]A series of polysiloxane containing carbazole group with different spacer length were synthesized. Charge transfer complexes were formed when the polymers were doped with low molecular weight EDNB. The chemical shift of the 1H-NMR of the aromatic protons moved upfield, due to the formation of the complexes. The Tg increased with the increasing EDNB content. The equilibrium constant of the EDA complex was 0.35 l/mole based on the UV-VIS spectra, and the Benedisi-Hildebrand equation, and the maximum complexation percent was 49% when EDNB/PMPrS-Cz was 0.1/1 ratio.[[sponsorship]]清華大學化學工程研究所; 行政院國家科學委員會工程科技推展中心; 中國化學工程學會[[conferencetype]]國內[[conferencedate]]19910627~19910628[[iscallforpapers]]Y[[conferencelocation]]新竹市, 臺