A new reference signal generation method for MRAM using a 90-degree rotated MTJ
- Jeong, WC
- Kim, HJ
- Park, JH
- Jeong, Changwook
- Lee, EY
- Oh, JH
- Jeong, GT
- Koh, GH
- Koo, HC
- Lee, SH
- Lee, SY
- Shin, JM
- Jeong, Hongsik
- Kim, K
Publication date
July 2004
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
0018-9464 Journal
IEEE Transactions on Magnetics Citation count (estimate)
11Abstract
A new reference signal generation method for high-density MRAM is reported. 0.4 x 0.8 mum(2) magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-mum CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R-H and low-resistance state R-L regardless of applied voltage. When tested in 8 x 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM
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