Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films

\u3cp\u3eNiobium pentoxide was deposited using \u3csup\u3et\u3c/sup\u3eBuN=Nb(NEt\u3csub\u3e2\u3c/sub\u3e)\u3csub\u3e3\u3c/sub\u3e as niobium precursor by both thermal atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PE-ALD) with H\u3csub\u3e2\u3c/sub\u3eO and O\u3csub\u3e2\u3c/sub\u3e plasma as coreactants, respectively. The deposition temperature was varied between 150 and 350 °C in both ALD processes. Amorphous films were obtained in all cases. Self-limiting saturated growth was confirmed for both ALD processes along with high uniformity over a 200 mm Si wafer. The PE-ALD process enabled a higher growth per cycle (GPC) than the thermal ALD process (0.56 Å vs 0.38 Å at 200 °C, respectively), while the GPC decreases with increasing temperature in both cases. The high purity of the film was confirmed using Rutherford backscattering spectrometry, elastic recoil detection, and x-ray photoelectron spectroscopy, while the latter technique also confirmed the Nb\u3csup\u3e+5\u3c/sup\u3e oxidation state of the niobium oxide films. The thermal ALD deposited films were substoichiometric due to the presence of oxygen vacancies (V\u3csub\u3eO\u3c/sub\u3e), of which a more dominant presence was observed with increasing deposition temperature. The PE-ALD deposited films were found to be near stoichiometric for all investigated deposition temperatures.\u3c/p\u3