Add to ORKGInternational audienceWe study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (> 1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modelling approach in a generic reversely biased bulk junction
International audienceAbstract GaN is the most promising upgrade to the traditional Si-based radiati...
International audienceElectrical behavior of COTS normally-off GaN power transistors under heavy ion...
Gallium Nitride(GaN) is known for its wide-energy bandgap of 3.4 eV and its high-efficiency as a sem...
International audienceWe study the physical mechanisms of single event production in GaN wide-bandga...
International audienceThis work explores by numerical simulation the impact of high-energy atmospher...
International audienceNew semiconductor materials are envisaged in numerous high-performance applica...
International audienceThis work is a first tentative to explore, by simulation, the radiation respon...
This work explores by numerical simulation the impact of high-energy atmospheric neutrons and their ...
This numerical simulation work investigates the basic physical mechanisms of single events induced i...
thesisGallium nitride has excellent potential in radiation-hard high-power electronic devices due to...
This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron p...
Radiation tolerance of wide-bandgap Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) ...
Results of SEE testing of commercial high power normally-off GaN-devices with an atmospheric-like ne...
International audienceThe widespread adoption of gGaN in radiation-hard semiconductor devices relies...
International audienceAbstract GaN is the most promising upgrade to the traditional Si-based radiati...
International audienceElectrical behavior of COTS normally-off GaN power transistors under heavy ion...
Gallium Nitride(GaN) is known for its wide-energy bandgap of 3.4 eV and its high-efficiency as a sem...
International audienceWe study the physical mechanisms of single event production in GaN wide-bandga...
International audienceThis work explores by numerical simulation the impact of high-energy atmospher...
International audienceNew semiconductor materials are envisaged in numerous high-performance applica...
International audienceThis work is a first tentative to explore, by simulation, the radiation respon...
This work explores by numerical simulation the impact of high-energy atmospheric neutrons and their ...
This numerical simulation work investigates the basic physical mechanisms of single events induced i...
thesisGallium nitride has excellent potential in radiation-hard high-power electronic devices due to...
This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron p...
Radiation tolerance of wide-bandgap Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) ...
Results of SEE testing of commercial high power normally-off GaN-devices with an atmospheric-like ne...
International audienceThe widespread adoption of gGaN in radiation-hard semiconductor devices relies...
International audienceAbstract GaN is the most promising upgrade to the traditional Si-based radiati...
International audienceElectrical behavior of COTS normally-off GaN power transistors under heavy ion...
Gallium Nitride(GaN) is known for its wide-energy bandgap of 3.4 eV and its high-efficiency as a sem...