Verfahren und Vorrichtung zur Bearbeitung eines Halbleiterbauelementes mit zumindest einer Halbleiterschicht

The invention relates to a method for machining a semiconductor component having at least one semiconductor layer, wherein laser radiation is applied to the semiconductor component in a machining step. According to the invention, in a structure creation step before the machining step, an absorption structure is applied to the surface of the semiconductor component, said absorption structure only partially covering the surface; in the machining step after application of the absorption structure, laser radiation is applied at least to the absorption structure, wherein absorption material is used for the absorption structure and laser radiation is used within a wavelength range such that the absorption of the laser radiation for the material of the semiconductor layer is lower by at least a factor of 10 than in the material of the absorption structure; and each portion of the absorption structure is machined in the machining step at least 1 ms after application of said portion in the structure creation step