A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP

This paper presents a novel broadband, induetorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process