We have investigated the contributions of surface effects to Monte Carlo simulations of top-down scanning electron microscopy (SEM) images. The elastic and inelastic scattering mechanisms in typical simulations assume that the electron is deep in the bulk of the material. In this work, we correct the inelastic model for surface effects. We use a model for infinite flat surfaces, and apply it to non-flat, but smooth, geometries. Though this is a simplification, it captures most qualitative differences to the bulk model, including coupling to surface plasmons. We find that this correction leads to an increased SE signal near a feature's sidewall in low-voltage critical dimension SEM (CD-SEM). The effect is strongest for low beam energies. Due...
There is a growing interest for patterning on curved or tilted surfaces using electron beam lithogra...
The sensitivity of simulated scanning electron microscopy (SEM) images to the various physical model...
A new Monte Carlo calculation model is introduced to simulate not only the primary electron behavior...
We have investigated the contributions of surface effects to Monte Carlo simulations of top-down sca...
In the simulation of secondary electron yields (SEY) and secondary electron microscopy (SEM) images,...
Background: Line-edge roughness (LER) is often measured from top-down critical dimension scanning el...
Line-edge roughness (LER) is often measured from top-down critical dimension scanning electron micro...
A theory is proposed to include the effects of valence excitations in electron image simulations for...
Theoretical analysis of dimensional measurements made using a scanning electron microscope (SEM) req...
We calculate the thickness of the surface scattering layer, defined as the region where electron ine...
Simulations of images of surface steps obtained by high energy reflection electron microscopy are pr...
Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the sim...
Besides the use of the most sophisticated equipment, accurate nanometrology for the most advanced CM...
International audienceAlthough the critical dimension (CD) is getting smaller following the ITRS roa...
The state of the art in Monte Carlo simulations of scanning electron microscope (SEM) signals is rev...
There is a growing interest for patterning on curved or tilted surfaces using electron beam lithogra...
The sensitivity of simulated scanning electron microscopy (SEM) images to the various physical model...
A new Monte Carlo calculation model is introduced to simulate not only the primary electron behavior...
We have investigated the contributions of surface effects to Monte Carlo simulations of top-down sca...
In the simulation of secondary electron yields (SEY) and secondary electron microscopy (SEM) images,...
Background: Line-edge roughness (LER) is often measured from top-down critical dimension scanning el...
Line-edge roughness (LER) is often measured from top-down critical dimension scanning electron micro...
A theory is proposed to include the effects of valence excitations in electron image simulations for...
Theoretical analysis of dimensional measurements made using a scanning electron microscope (SEM) req...
We calculate the thickness of the surface scattering layer, defined as the region where electron ine...
Simulations of images of surface steps obtained by high energy reflection electron microscopy are pr...
Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the sim...
Besides the use of the most sophisticated equipment, accurate nanometrology for the most advanced CM...
International audienceAlthough the critical dimension (CD) is getting smaller following the ITRS roa...
The state of the art in Monte Carlo simulations of scanning electron microscope (SEM) signals is rev...
There is a growing interest for patterning on curved or tilted surfaces using electron beam lithogra...
The sensitivity of simulated scanning electron microscopy (SEM) images to the various physical model...
A new Monte Carlo calculation model is introduced to simulate not only the primary electron behavior...