Novel method for evaluation of negative bias temperature instability of SiC MOSFETs

The material properties of SiC make SiC power devices a superior alternative to the conventional Si power devices. However, the reliability of the gate oxide has been a major concern, limiting the adoption of SiC power MOSFETs as the power semiconductor of choice in applications which demand a high reliability. The threshold voltage (VTH) shift caused by Bias Temperature Instability (BTI) has focused the attention of different researchers, with multiple publications on this topic. This paper presents a novel method for evaluating the threshold voltage shift due to negative gate bias and its recovery when the gate bias stress is removed. This method could enable gate oxide reliability assessment techniques and contribute to new qualification methods