反応性 RF スパッタ法により形成した Pr+Ce 酸化膜の構造

Praseodymium+Cerium oxide films were fabricated on p-type Si (100) substrates by the reactive RF magnetron co-sputtering with a metal Pr target and a sintered CeO2 target in Ar + 10 % O2. Deposited filmswere post-annealed in an ambient of N2 for 30 minutes at temperatures of 300, 500 and 800°C. In the case of Pr oxide deposition, the films was not deposited on the substrate set at the centered position with respect to the sputtering cathode and the phase transition occurred from cubic PrO2 to hexagonal Pr2O3 after annealing at800°C. In the contrary case of Pr+Ce oxide deposition, the films was deposited on the substrate set at the centered position with respect to the sputtering and the phase transition did not occur.Key Words : praseodymium, cerium, high-k, sputter, silicat