The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford backscattering spectroscopy (RBS), photoluminescence (PL), Nuclear reaction analysis (NRA), elastic recoil detection analysis (ERDA), and Van der Pauw methods. The resistivity decreases from ~103 Ωcm for un implanted ZnO to 6.5 Ωcm for as-implanted, 2.3 × 10-1 Ωcm for 200 ℃ annealed, and 3.2× 10-1 Ωcm for 400 ℃ annealed samples. RBS measurements show that Zn interstitial as a shallow donor is not recognized in as-implanted samples. From photoluminescence measurements, the broad green band emission is observed in as-implanted samples. NRA measurements for as-implanted ZnO suggest the existence of the oxygen interstitial. The origins of the lo...
Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to e...
Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its ...
The resistivity of hydrothermally grown ZnO single crystals increased from similar to 10(3) Omega cm...
The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford...
The origins of low resistivity in Ge ion-implanted ZnO bulk single crystals are studied by Van der P...
ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operatin...
Advancements in ZnO device applications have fostered much interest in the electrical and optical ac...
The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n...
ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operatin...
We studied the structural properties, defect formation, and thermal stability of H in hydrothermally...
Unintentionally doped n-type ZnO single crystals were implanted by nitrogen ions with different flue...
The role of excess intrinsic atoms for residual point defect balance has been discriminated by impla...
Undoped ZnO single crystals were implanted with multiple-energy N+ ions ranging from 50 to 380 keV w...
We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spe...
Hall effect, Raman scattering, photoluminescence spectroscopy (PL), optical absorption (OA), mass sp...
Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to e...
Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its ...
The resistivity of hydrothermally grown ZnO single crystals increased from similar to 10(3) Omega cm...
The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford...
The origins of low resistivity in Ge ion-implanted ZnO bulk single crystals are studied by Van der P...
ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operatin...
Advancements in ZnO device applications have fostered much interest in the electrical and optical ac...
The role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n...
ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operatin...
We studied the structural properties, defect formation, and thermal stability of H in hydrothermally...
Unintentionally doped n-type ZnO single crystals were implanted by nitrogen ions with different flue...
The role of excess intrinsic atoms for residual point defect balance has been discriminated by impla...
Undoped ZnO single crystals were implanted with multiple-energy N+ ions ranging from 50 to 380 keV w...
We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spe...
Hall effect, Raman scattering, photoluminescence spectroscopy (PL), optical absorption (OA), mass sp...
Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to e...
Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its ...
The resistivity of hydrothermally grown ZnO single crystals increased from similar to 10(3) Omega cm...