The electrochemical impedance spectroscopy (EIS) was used to analyse the corrosion behaviour of the Ni plated brass (OT59) substrate covered by SiO2 coatings of different thickness. The specimens were immersed for long time (up to 168h) in a corrosive solution (synthetic swear). Plasma Enhanced Chemical Vapour Deposition (PECVD) technique was used to deposit SiO2 coatings: the aim was to obtain a surface treatment that prevents the release of Ni, an allergenic metal. The deposition was performed in RF (13.56 MHz) plasma with hexamethyldisiloxan (HMDSO) and O2 mixture at near room temperature without any solvents and without particular surface pretreatments. Different thickness of SiO2 film was obtained varying the time of plasma exposure. ...
In this contribution it will be shown that plasma enhanced chemical vapor deposition (PECVD) of sili...
This paper describes the preliminary results on the utilization of thin film deposited in Plasmas fe...
In this contribution it will be shown that plasma enhanced chemical vapor deposition (PECVD) of sili...
The electrochemical impedance spectroscopy (EIS) was used to analyse the corrosion behaviour of the ...
The electrochemical impedance spectroscopy (EIS) was used to analyse the corrosion behaviour of the ...
SiO2 layers deposited on OT59 brass substrate (BS) via Plasma Enhanced Chemical Vapour Deposition (P...
SiO2 layers deposited on OT59 brass substrate (BS) via Plasma Enhanced Chemical Vapour Deposition (P...
SiO2 layers deposited on OT59 brass substrate (BS) via Plasma Enhanced Chemical Vapour Deposition (P...
SiO2 layers deposited on OT59 brass substrate (BS) via Plasma Enhanced Chemical Vapour Deposition (P...
This study deals with the surface and electrochemical characterization of mild steel surfaces after ...
The first screening results concerning the corrosion behaviour (Ni2+ release) of an industrial Ni-Ag...
The first screening results concerning the corrosion behaviour (Ni2+ release) of an industrial Ni-Ag...
The first screening results concerning the corrosion behaviour (Ni2+ release) of an industrial Ni-Ag...
In this project, modern electrochemical impedance spectroscopy (EIS) will be used to conduct in situ...
Plasma enhanced chemical vapor deposition (PECVD) from silicon-containing organic compounds, such as...
In this contribution it will be shown that plasma enhanced chemical vapor deposition (PECVD) of sili...
This paper describes the preliminary results on the utilization of thin film deposited in Plasmas fe...
In this contribution it will be shown that plasma enhanced chemical vapor deposition (PECVD) of sili...
The electrochemical impedance spectroscopy (EIS) was used to analyse the corrosion behaviour of the ...
The electrochemical impedance spectroscopy (EIS) was used to analyse the corrosion behaviour of the ...
SiO2 layers deposited on OT59 brass substrate (BS) via Plasma Enhanced Chemical Vapour Deposition (P...
SiO2 layers deposited on OT59 brass substrate (BS) via Plasma Enhanced Chemical Vapour Deposition (P...
SiO2 layers deposited on OT59 brass substrate (BS) via Plasma Enhanced Chemical Vapour Deposition (P...
SiO2 layers deposited on OT59 brass substrate (BS) via Plasma Enhanced Chemical Vapour Deposition (P...
This study deals with the surface and electrochemical characterization of mild steel surfaces after ...
The first screening results concerning the corrosion behaviour (Ni2+ release) of an industrial Ni-Ag...
The first screening results concerning the corrosion behaviour (Ni2+ release) of an industrial Ni-Ag...
The first screening results concerning the corrosion behaviour (Ni2+ release) of an industrial Ni-Ag...
In this project, modern electrochemical impedance spectroscopy (EIS) will be used to conduct in situ...
Plasma enhanced chemical vapor deposition (PECVD) from silicon-containing organic compounds, such as...
In this contribution it will be shown that plasma enhanced chemical vapor deposition (PECVD) of sili...
This paper describes the preliminary results on the utilization of thin film deposited in Plasmas fe...
In this contribution it will be shown that plasma enhanced chemical vapor deposition (PECVD) of sili...