High Temperature Stability and Performance Analysis of N-doped Ge-Se-Sb based OTS Selector Devices

International audienceIn this paper, we investigate the stability at high temperature of N-doped Ge-Se-Sb based Ovonic Threshold Switching selectors (OTS). Annealing temperatures up to 400°C are explored, compatible with IC Back-End-Of-Line temperature budget (BEOL). Thanks to electrical characterization and material physico-chemical analysis, we show how an annealing of 30 minutes at 400°C is beneficial for the reduction of the threshold voltage. Moreover, after such thermal budget, an ultra-low leakage current of 0.1 nA at V$_{th}$/2 and an endurance of more than 10$^8$ cycles are still ensured. Electrical parameters and selector performance are then analyzed at stress temperatures up to 150°C, demonstrating the suitability of Ge-Se-Sb based OTS selector devices for BEOL integrations for applications targeting high temperature operating environments