International audienceSingle Event Transients (SET) are important issues concerning reliability of CMOS circuits. They lead to occurrenceof soft errors in integrated circuits, such as Single Event Upset (SEU) which consists in unexpected bit state switch in SRAM cells[1,2]. We can find models which describe SET in literature [1, 5] but they are not compact (i e. physical model implemented inVerilog-A). In previous work [6], we proposed a theoretical SET model but the implementation in Verilog-A was still challenging.Here, we describe the implementation in Verilog-A of this model and use it through standard SPICE simulations to study the effectof SET on SRAM cell and shift register
A practical model for a single-electron transistor (SET) was developed based on the physical phenome...
As the development of a technology, semiconductor needs to be smaller and more advance. According to...
A simple way for modeling the single event upset (SEU) in Partially Depleted (PD) SOI CMOS circuits ...
International audienceSingle Event Transients (SET) are important issues concerning reliability of C...
International audienceSingle Event Transients (SET) are ionizing particles induced current pulses wh...
This paper presents a compact model implemented in Verilog-A for partially depleted (PD) silicon-on-...
The basic mechanisms of single-event upset are reviewed, including charge collection in silicon junc...
The effect of single-event transients (SETs) (at a combinational node of a design) on the system rel...
Single Event Transients in analog and digital electronics from space generated high energetic nuclea...
In this paper, we develop a model to simulate the single event transient (SET) phenomena in LDMOS-SO...
In this paper, we develop a model to simulate the single event transient (SET) phenomena in LDMOS-SO...
The generation and propagation of single event transients (SET) in logic gate chains is studied and ...
Recent deep-submicron-technology-based integrated circuits (ICs) are substantially more susceptible ...
Abstract—Single-event transients (SETs) are modeled in a SiGe voltage reference using compact model ...
International audienceThis paper presents the analysis of pulse quenching effects induced in silicon...
A practical model for a single-electron transistor (SET) was developed based on the physical phenome...
As the development of a technology, semiconductor needs to be smaller and more advance. According to...
A simple way for modeling the single event upset (SEU) in Partially Depleted (PD) SOI CMOS circuits ...
International audienceSingle Event Transients (SET) are important issues concerning reliability of C...
International audienceSingle Event Transients (SET) are ionizing particles induced current pulses wh...
This paper presents a compact model implemented in Verilog-A for partially depleted (PD) silicon-on-...
The basic mechanisms of single-event upset are reviewed, including charge collection in silicon junc...
The effect of single-event transients (SETs) (at a combinational node of a design) on the system rel...
Single Event Transients in analog and digital electronics from space generated high energetic nuclea...
In this paper, we develop a model to simulate the single event transient (SET) phenomena in LDMOS-SO...
In this paper, we develop a model to simulate the single event transient (SET) phenomena in LDMOS-SO...
The generation and propagation of single event transients (SET) in logic gate chains is studied and ...
Recent deep-submicron-technology-based integrated circuits (ICs) are substantially more susceptible ...
Abstract—Single-event transients (SETs) are modeled in a SiGe voltage reference using compact model ...
International audienceThis paper presents the analysis of pulse quenching effects induced in silicon...
A practical model for a single-electron transistor (SET) was developed based on the physical phenome...
As the development of a technology, semiconductor needs to be smaller and more advance. According to...
A simple way for modeling the single event upset (SEU) in Partially Depleted (PD) SOI CMOS circuits ...