We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above ∼25T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBiPt the Fermi surface remains unaffected. Electronic band-structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology
Low-temperature, high-field deHaas–van Alphen measurements are presented which show that the conduct...
Magnetoresistance measurements have been made on a number of single-crystal samples of the metallic ...
We report magnetic-field-orientation dependent de Haas-van Alphen (dHvA) experiments on the filled s...
We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by elect...
The half-Heusler compounds CeBiPt and LaBiPt are semimetals with very low charge-carrier concentrati...
Shubnikov-de Haas (SdH) and Hall-effect measurements of CeBiPt and LaBiPt reveal the presence of ver...
Heavy fermion metals often exhibit novel electronic states at low temperatures, due to competing int...
We report susceptibility experiments in magnetic fields up to 60 T and show conclusively that the de...
Magnetoresistance measurements carried out in pulsed magnetic fields of up to 60 T and at temperatur...
Using angle-resolved photoemission spectroscopy (ARPES) and resonant ARPES, we report evidence of st...
International audienceWe report low-temperature de Haas-van Alphen (dHvA) effect measurements in mag...
International audienceWe report on magnetic-torque and resistivity measurements of the heavy-fermion...
Low-temperature, high-field deHaas van Alphen measurements are presented which show that the conduct...
7 pages, 4 figures + Supplemental Material (5 pages, 10 figures)International audienceWe report a co...
We report the first observation of a field-dependent mass in a hybridizing f-electron system. CeB6 i...
Low-temperature, high-field deHaas–van Alphen measurements are presented which show that the conduct...
Magnetoresistance measurements have been made on a number of single-crystal samples of the metallic ...
We report magnetic-field-orientation dependent de Haas-van Alphen (dHvA) experiments on the filled s...
We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by elect...
The half-Heusler compounds CeBiPt and LaBiPt are semimetals with very low charge-carrier concentrati...
Shubnikov-de Haas (SdH) and Hall-effect measurements of CeBiPt and LaBiPt reveal the presence of ver...
Heavy fermion metals often exhibit novel electronic states at low temperatures, due to competing int...
We report susceptibility experiments in magnetic fields up to 60 T and show conclusively that the de...
Magnetoresistance measurements carried out in pulsed magnetic fields of up to 60 T and at temperatur...
Using angle-resolved photoemission spectroscopy (ARPES) and resonant ARPES, we report evidence of st...
International audienceWe report low-temperature de Haas-van Alphen (dHvA) effect measurements in mag...
International audienceWe report on magnetic-torque and resistivity measurements of the heavy-fermion...
Low-temperature, high-field deHaas van Alphen measurements are presented which show that the conduct...
7 pages, 4 figures + Supplemental Material (5 pages, 10 figures)International audienceWe report a co...
We report the first observation of a field-dependent mass in a hybridizing f-electron system. CeB6 i...
Low-temperature, high-field deHaas–van Alphen measurements are presented which show that the conduct...
Magnetoresistance measurements have been made on a number of single-crystal samples of the metallic ...
We report magnetic-field-orientation dependent de Haas-van Alphen (dHvA) experiments on the filled s...