We study the behavior under pressure (up to 35 GPa) of intercalated silicon clathrates, combining x-ray diffraction experiments and ab initio calculations. We show that endohedral doping does not introduce a strong modification of the compressibility of the empty clathrate network and that in particular cases can raise it to values equivalent to the one of the silicon diamond phase. Intercalation can also prevent the collapse of the cage structure up to pressures at least 3 times higher than in the empty clathrate. Further we find that the stability of all studied silicon clathrate networks as well as stressed silicon diamond is limited to average Si-Si interatomic distances higher than 2.30 Å
At ambient temperature and pressure, most of the semiconductor materials are brittle. Traditionally,...
We present a joint experimental and theoretical study of the superconductivity in doped silicon clat...
A combined experimental and theoretical study of the superconductivity in doped silicon clathrates w...
We study the behavior under pressure (up to 35 GPa) of intercalated silicon clathrates, combining x-...
We study the behavior under pressure (up to 35 GPa) of intercalated silicon clathrates, combining x-...
We discuss the high pressure properties of different silicon clathrate structures that we have inves...
International audienceWe discuss the high pressure properties of different silicon clathrate structu...
International audienceWe have pushed the limits of X-ray absorption spectroscopy under high pressure...
We present a joint experimental and theoretical study of the stability and structural properties of ...
Three different sodium-silicon clathrate compounds–Na<sub>8</sub>Si<sub>46</sub> (sI), Na<sub>24</su...
We present an ab initio study of the structural and electronic properties of type-I and type-II sili...
The stable and metastable melting relations for silicon in the diamond and Si136 clathrate-II struct...
International audienceThe high pressure stability of the silicon type-III clathrate Ba24Si100 has be...
International audienceUnderstanding of the covalent clathrate formation is a crucial point for the d...
We use computational high-throughput techniques to study the thermodynamic stability of ternary type...
At ambient temperature and pressure, most of the semiconductor materials are brittle. Traditionally,...
We present a joint experimental and theoretical study of the superconductivity in doped silicon clat...
A combined experimental and theoretical study of the superconductivity in doped silicon clathrates w...
We study the behavior under pressure (up to 35 GPa) of intercalated silicon clathrates, combining x-...
We study the behavior under pressure (up to 35 GPa) of intercalated silicon clathrates, combining x-...
We discuss the high pressure properties of different silicon clathrate structures that we have inves...
International audienceWe discuss the high pressure properties of different silicon clathrate structu...
International audienceWe have pushed the limits of X-ray absorption spectroscopy under high pressure...
We present a joint experimental and theoretical study of the stability and structural properties of ...
Three different sodium-silicon clathrate compounds–Na<sub>8</sub>Si<sub>46</sub> (sI), Na<sub>24</su...
We present an ab initio study of the structural and electronic properties of type-I and type-II sili...
The stable and metastable melting relations for silicon in the diamond and Si136 clathrate-II struct...
International audienceThe high pressure stability of the silicon type-III clathrate Ba24Si100 has be...
International audienceUnderstanding of the covalent clathrate formation is a crucial point for the d...
We use computational high-throughput techniques to study the thermodynamic stability of ternary type...
At ambient temperature and pressure, most of the semiconductor materials are brittle. Traditionally,...
We present a joint experimental and theoretical study of the superconductivity in doped silicon clat...
A combined experimental and theoretical study of the superconductivity in doped silicon clathrates w...