Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of high power laser diodes by intermixing the facet regions of the device to increase the band-gap and hence eliminate absorption, avoiding catastrophic optical damage (COD). The non-absorbing mirror (NAM) regions of the laser cavity can be up to ~20% of the cavity length, giving an additional benefit on cleave tolerances, to fabricate very large element arrays of high power, individually addressable, single mode lasers. As a consequence, large arrays of single mode lasers can bring additional benefits for packaging in terms of hybrization and integration into an optics system. Our QWI techniques have been applied to a range of material systems...
Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V com...
A novel technique for quantum-well intermixing is demonstrated, which has proven a reliable means fo...
In this paper we report the development of high power high brightness semiconductor laser chips usin...
Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of...
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
Monolithic mode-locked semiconductor lasers are attractive sources of short optical pulses with adva...
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
Monolithic mode-locked semiconductor lasers are attractive sources of short optical pulses with adva...
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
Intermixing the wells and barriers of quantum well structures generally results in an increase in th...
recise control over local optical and electrical characteristics across a semiconductor wafer is a f...
We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote ...
We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote ...
Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V com...
Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V com...
A novel technique for quantum-well intermixing is demonstrated, which has proven a reliable means fo...
In this paper we report the development of high power high brightness semiconductor laser chips usin...
Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of...
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
Monolithic mode-locked semiconductor lasers are attractive sources of short optical pulses with adva...
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
Monolithic mode-locked semiconductor lasers are attractive sources of short optical pulses with adva...
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
Intermixing the wells and barriers of quantum well structures generally results in an increase in th...
recise control over local optical and electrical characteristics across a semiconductor wafer is a f...
We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote ...
We report the use of a pulsed laser irradiation technique, using multiphoton absorption, to promote ...
Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V com...
Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V com...
A novel technique for quantum-well intermixing is demonstrated, which has proven a reliable means fo...
In this paper we report the development of high power high brightness semiconductor laser chips usin...