Add to ORKGSpin-transfer torque RAMs (STT-RAMs) have been studied as a promising alternative to SRAMs in emerging caches and main memories due to their low leakage power and high density. However, STT-RAMs, also have drawbacks of high dynamic write energy and long write latency. Relaxing the retention time of the non-volatile STT-RAM has been widely studied as a way to reduce STT-RAM's write energy and latency. However, since different applications may require different retention times, STT-RAM retention times must be critically explored to satisfy various applications' needs. This process can be challenging due to exploration overhead, and exacerbated by the fact that STT-RAM caches are emerging and are not readily available for design time explorat...
As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the crit...
SRAM based cache becomes a more critical source of power dissipation, particularly for large last le...
Energy efficiency has become one of the primary considerations in the designs of cyber-physical syst...
Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAM in on-chip caches, due to advan...
Spin-transfer torque random access memory (STT-RAM) is a promising nonvolatile memory (NVM) solution...
STT-RAM (Spin Transfer Torque Random Access Memory) has been extensively researched as a potential r...
International audienceEnergy-efficiency is one of the most challenging design issues in both embedde...
International audienceEnergy-efficiency has become one major challenge in both embedded and high-per...
The advent of many core architectures has coincided with the energy and power limited design of mod...
Modern architectures adopt large on-chip cache memory hierarchies with more than two levels. While t...
[Abstract] On-chip power consumption is one of the fundamental challenges of current technology scal...
Spin transfer torque magnetic RAM (STT-MRAM) technology is one of the most promising alternative for...
Thesis (Ph. D.)--University of Rochester. Department of Electrical and Computer Engineering, 2015.As...
Magnetic memory technologies are very promising candidates to be universal memory due to its good sc...
As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the crit...
SRAM based cache becomes a more critical source of power dissipation, particularly for large last le...
Energy efficiency has become one of the primary considerations in the designs of cyber-physical syst...
Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAM in on-chip caches, due to advan...
Spin-transfer torque random access memory (STT-RAM) is a promising nonvolatile memory (NVM) solution...
STT-RAM (Spin Transfer Torque Random Access Memory) has been extensively researched as a potential r...
International audienceEnergy-efficiency is one of the most challenging design issues in both embedde...
International audienceEnergy-efficiency has become one major challenge in both embedded and high-per...
The advent of many core architectures has coincided with the energy and power limited design of mod...
Modern architectures adopt large on-chip cache memory hierarchies with more than two levels. While t...
[Abstract] On-chip power consumption is one of the fundamental challenges of current technology scal...
Spin transfer torque magnetic RAM (STT-MRAM) technology is one of the most promising alternative for...
Thesis (Ph. D.)--University of Rochester. Department of Electrical and Computer Engineering, 2015.As...
Magnetic memory technologies are very promising candidates to be universal memory due to its good sc...
As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the crit...
SRAM based cache becomes a more critical source of power dissipation, particularly for large last le...
Energy efficiency has become one of the primary considerations in the designs of cyber-physical syst...