In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the light on different aspects of the memory operation. The key fundamental questions related to material development, device scalability effects, utilization as multi-bit storage, write conditions, and memory endurance capability are overviewed based on experimental results of the MFIS based FeFET. The opportunities and challenges for the FeFET memory are discussed with emphasis on the fundamental principles and dependencies shaping its development
Despite large efforts in research of HfO 2 -based ferroelectric (FE) random access memories (FRAM), ...
The discovery of ferroelectric properties in polycrystalline HfO2 has revived the interest in ferroe...
Ferroelectricity is a material property were a remanent polarization exists under zero electrical fi...
In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the...
In recent years, and with the discovery of ferroelectricity in hafnium oxide, it was possible to sca...
The ferroelectricity in fluorite structure based hafnium oxide (HfO2) material expanded the horizon ...
Machine learning and artificial intelligence demand new non-volatility memory technologies suitable ...
International audienceEmerging non-volatile memories are getting new interest in the system design c...
Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However...
Ferroelectric Si: HfO2 has been investigated starting from metal-ferroelectric-metal (MFM) capacitor...
This book provides comprehensive coverage of the materials characteristics, process technologies, an...
The recently discovered ferroelectric behavior of HfO2-based dielectrics yields the potential to ove...
Flash memory is reaching scaling limitations rapidly due to reduction of charge in floating gates, c...
Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora...
With the discovery of the ferroelectric (FE) properties within HfO₂, the scaling gap between state-o...
Despite large efforts in research of HfO 2 -based ferroelectric (FE) random access memories (FRAM), ...
The discovery of ferroelectric properties in polycrystalline HfO2 has revived the interest in ferroe...
Ferroelectricity is a material property were a remanent polarization exists under zero electrical fi...
In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the...
In recent years, and with the discovery of ferroelectricity in hafnium oxide, it was possible to sca...
The ferroelectricity in fluorite structure based hafnium oxide (HfO2) material expanded the horizon ...
Machine learning and artificial intelligence demand new non-volatility memory technologies suitable ...
International audienceEmerging non-volatile memories are getting new interest in the system design c...
Ferroelectrics are theoretically an ideal solution for low write power nonvolatile memories. However...
Ferroelectric Si: HfO2 has been investigated starting from metal-ferroelectric-metal (MFM) capacitor...
This book provides comprehensive coverage of the materials characteristics, process technologies, an...
The recently discovered ferroelectric behavior of HfO2-based dielectrics yields the potential to ove...
Flash memory is reaching scaling limitations rapidly due to reduction of charge in floating gates, c...
Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora...
With the discovery of the ferroelectric (FE) properties within HfO₂, the scaling gap between state-o...
Despite large efforts in research of HfO 2 -based ferroelectric (FE) random access memories (FRAM), ...
The discovery of ferroelectric properties in polycrystalline HfO2 has revived the interest in ferroe...
Ferroelectricity is a material property were a remanent polarization exists under zero electrical fi...