High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in-situ diagnostics
- Kessels, W.M.M.
- van den Oever, P.J.
- Hoefnagels, J.P.M.
- Hong, J.
- Houston, I.J.
- Sanden, van de, M.C.M.
- Cohen, J.D.
DOIAbstract
Plasma and in situ film studies have been applied to the expanding thermal plasma toobtain basic insight into the deposition of a-Si:H and µc-Si:H at high rates (> 10 Å/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals’ surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate
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