This work was aimed at studying the influence of ion bombardment on the preferred orientation (OP) of transition metal nitrides (TMN) produced by the reactive sputtering technique with a variable unbalanced magnetron through permanent magnets. Titanium nitride (TiN) coatings were thus studied by varying two parameters: ion-atom ratio on the substrate (Ji/Ja) and nitrogen flux. Deposition conditions were as follows: 7 mTorr working pressure, ~ 380ºC substrate temperature, 2 and 8.5 sccm nitrogen flux and 245-265 discharge power. The results showed that preferred orientation (111) and the crystalline behaviour of the produced coatings depended more on nitrogen flux than on ion bombardment. Similarly, micro-hardness measured on films deposited...
The present paper reports the influence of growth conditions on the properties of TiN thin films dep...
The effects of nitrogen pre-implantation of AISI C1045 steel substrates on the properties of deposit...
This paper reports the structural and electrochemical behaviour of TiN thin films prepared by d.c. r...
El propósito de este trabajo es el de estudiar la influencia del bombardeo de iones sobre la orient...
The effect of substrate orientation and ion bombardment during the growth on the structure and prope...
The microstructure of transition metallic nitride coatings is determined by the deposit parameters, ...
TiN/TiAIN multilayer were deposited by means of d.c. reactive Magnetron Sputtering technique using t...
Ti-Si-N coatings were deposited by DC reactive magnetron sputtering on stainless steel AISI 304 subs...
Abstract: Titanium nitride thin films deposited by reactive dc magnetron sputtering under various su...
Reactive Sputtering is a widely used technique in processing of thin compound films. Such films can ...
The purpose of this study is to develop and characterize Ti-B-N deposits developed by magnetron sput...
In this work the corrosion behavior of zirconium nitride (ZrN), titanium nitride (TiN), chromium nit...
A d.c. reactive magnetron sputtering technique was used to deposit (Ti, Si, Al)N films. The ion curr...
Titanium nitride (TiN) coatings were deposited by d.c. reactive magnetron sputtering process. The fi...
Ion bombardment during thin film growth is known to cause structural and morphological changes in th...
The present paper reports the influence of growth conditions on the properties of TiN thin films dep...
The effects of nitrogen pre-implantation of AISI C1045 steel substrates on the properties of deposit...
This paper reports the structural and electrochemical behaviour of TiN thin films prepared by d.c. r...
El propósito de este trabajo es el de estudiar la influencia del bombardeo de iones sobre la orient...
The effect of substrate orientation and ion bombardment during the growth on the structure and prope...
The microstructure of transition metallic nitride coatings is determined by the deposit parameters, ...
TiN/TiAIN multilayer were deposited by means of d.c. reactive Magnetron Sputtering technique using t...
Ti-Si-N coatings were deposited by DC reactive magnetron sputtering on stainless steel AISI 304 subs...
Abstract: Titanium nitride thin films deposited by reactive dc magnetron sputtering under various su...
Reactive Sputtering is a widely used technique in processing of thin compound films. Such films can ...
The purpose of this study is to develop and characterize Ti-B-N deposits developed by magnetron sput...
In this work the corrosion behavior of zirconium nitride (ZrN), titanium nitride (TiN), chromium nit...
A d.c. reactive magnetron sputtering technique was used to deposit (Ti, Si, Al)N films. The ion curr...
Titanium nitride (TiN) coatings were deposited by d.c. reactive magnetron sputtering process. The fi...
Ion bombardment during thin film growth is known to cause structural and morphological changes in th...
The present paper reports the influence of growth conditions on the properties of TiN thin films dep...
The effects of nitrogen pre-implantation of AISI C1045 steel substrates on the properties of deposit...
This paper reports the structural and electrochemical behaviour of TiN thin films prepared by d.c. r...