The development of physical models for power devices this closely related to solution of the diffusion equation ambipolar (ADE), equation that is considered as the last approximation based on physics of the semiconductor for the calculation of the behavior of the carriers in the region of low doping. In the literature they have proposed different approximations as solution of ADE, where the level of accuracy is dependent of number of utilized terms. In this article we have a proposal of empiric approximation depend of the diffusion length ambipolar as solution of ADE, the solution methodology is not limited to a number of terms for what is possible a bigger accuracy of results. The group of resulting equations is implemented in the simulato...
El presente artículo tiene como principal objetivo realizar el estudio del modelado matemático de lo...
It was determined that the forward loss resistance as a function of the radius of the active region ...
The main problems occurring during high power device modeling are discussed in this paper. Unipolar ...
Keywords- Power bipolar devices, diffusion problems, modeling and simulation. This paper presents a ...
This paper presents a variational formulation of the Ambipolar Diffusion Equation (ADE) and a finite...
The distributed modeling approach of power bipolar devices implemented compactly by solving the ambi...
A new PSPICE subcircuit model for power PiN diodes is presented. The model is based on an equivalent...
La complejidad creciente de los sistemas electrónicos, el escalado de las dimensiones con nuevos nod...
A physics-based model for PiN power diodes is developed and implemented as a SPICE subcircuit. The m...
This paper describes the methodology associated with the practical implementation, in SPICE circuit ...
The paper demonstrates a finite-element method(FEM) simulation model of semiconductor devices operat...
Este trabajo se enmarca en el área de dispositivos semiconductores, siendo su propósito concreto el ...
A new SPICE subcircuit model for power p-i-n diodes is proposed in this paper. The model is based on...
This book presents physics-based models of bipolar power semiconductor devices and their implementat...
In this work presents an analysis of field effect transistors using pulsed voltage sources has been ...
El presente artículo tiene como principal objetivo realizar el estudio del modelado matemático de lo...
It was determined that the forward loss resistance as a function of the radius of the active region ...
The main problems occurring during high power device modeling are discussed in this paper. Unipolar ...
Keywords- Power bipolar devices, diffusion problems, modeling and simulation. This paper presents a ...
This paper presents a variational formulation of the Ambipolar Diffusion Equation (ADE) and a finite...
The distributed modeling approach of power bipolar devices implemented compactly by solving the ambi...
A new PSPICE subcircuit model for power PiN diodes is presented. The model is based on an equivalent...
La complejidad creciente de los sistemas electrónicos, el escalado de las dimensiones con nuevos nod...
A physics-based model for PiN power diodes is developed and implemented as a SPICE subcircuit. The m...
This paper describes the methodology associated with the practical implementation, in SPICE circuit ...
The paper demonstrates a finite-element method(FEM) simulation model of semiconductor devices operat...
Este trabajo se enmarca en el área de dispositivos semiconductores, siendo su propósito concreto el ...
A new SPICE subcircuit model for power p-i-n diodes is proposed in this paper. The model is based on...
This book presents physics-based models of bipolar power semiconductor devices and their implementat...
In this work presents an analysis of field effect transistors using pulsed voltage sources has been ...
El presente artículo tiene como principal objetivo realizar el estudio del modelado matemático de lo...
It was determined that the forward loss resistance as a function of the radius of the active region ...
The main problems occurring during high power device modeling are discussed in this paper. Unipolar ...