Metallorganische Molekularstrahlepitaxie von Verbindungshalbleitern auf Arsenid- und Antimonidbasis

In the present contribution the growth of InAs, (Al,Ga)Sb and their heterostructures deposited by metalorganic molecular beam epitaxy (MOMBE) using the standard sources TMIn, TEGa, precracked arsine and elemental antimony was investigated. It is reported on the optimization of homoepitaxial InAs growth, where a correlation between good optical quality and the observation of RIMED (reflection high energy electron diffraction) intensity oscillations was found. This gives rise to the conclusion that, in MOMBE, growth conditions of InAs are at their best, when a two dimensional nucleation layer by layer growth mode is estabilished. The optical, structural, electrical and morphological data were state of the art. Also high qualitity GaSb could be deposited, which was demonstrated by 2K-photoluminescence (PL) spectra with narrowest FWHM of 1.0 meV and high PL-intensities of the excitonic emission line at 795.7 meV. For the first time dimethylethylaminealane (DMEAAl) was used as an aluminum precursor in MOMBE. The high excitonic luminescence of Al$_{0,26}$Ga$_{0,74}$Sb combined with the smallest FWHM (6.3 meV) of the bound exciton transition ever reported for a ternary alloy with such high Al content as well as the perfect structural data demonstrate the suitability of this source compound for growth of bulk materials. The structural investigation of a tenfold AlSb/GaSb superlattice shows the possibility of obtaining abrupt interfaces and of reproducible layer thickness with DMEAAI during heterostructural growth. This new precursor is an ideal candidate for the growth of Al-containing compounds